JPS52115171A - Liquid phase epitaxial growing method - Google Patents

Liquid phase epitaxial growing method

Info

Publication number
JPS52115171A
JPS52115171A JP3219076A JP3219076A JPS52115171A JP S52115171 A JPS52115171 A JP S52115171A JP 3219076 A JP3219076 A JP 3219076A JP 3219076 A JP3219076 A JP 3219076A JP S52115171 A JPS52115171 A JP S52115171A
Authority
JP
Japan
Prior art keywords
liquid phase
growing method
phase epitaxial
epitaxial growing
growint
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3219076A
Other languages
Japanese (ja)
Inventor
Saburo Yamamoto
Morichika Yano
Yukio Kurata
Kaneki Matsui
Akira Komuro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP3219076A priority Critical patent/JPS52115171A/en
Publication of JPS52115171A publication Critical patent/JPS52115171A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce defects caused by deficit of As as far possible by growint all of the grown layers of double hetero lasers using Ga As as a substrate, which Ga melt in a supersaturated sate.
COPYRIGHT: (C)1977,JPO&Japio
JP3219076A 1976-03-23 1976-03-23 Liquid phase epitaxial growing method Pending JPS52115171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3219076A JPS52115171A (en) 1976-03-23 1976-03-23 Liquid phase epitaxial growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3219076A JPS52115171A (en) 1976-03-23 1976-03-23 Liquid phase epitaxial growing method

Publications (1)

Publication Number Publication Date
JPS52115171A true JPS52115171A (en) 1977-09-27

Family

ID=12351973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3219076A Pending JPS52115171A (en) 1976-03-23 1976-03-23 Liquid phase epitaxial growing method

Country Status (1)

Country Link
JP (1) JPS52115171A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62176985A (en) * 1986-01-27 1987-08-03 Hitachi Cable Ltd Liquid phase epitaxy
JPH09131U (en) * 1996-06-13 1997-03-28 広三 小島 Circulation purification device for bath

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JOURNAL OF APPLIED PHTSICS#V47#M2=1976 *
JOURNAL OF CRYSTAL GROWTH#V27=1974 *
JOURNAL OF CRYSTAL GROWTH#V29=1975 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62176985A (en) * 1986-01-27 1987-08-03 Hitachi Cable Ltd Liquid phase epitaxy
JPH09131U (en) * 1996-06-13 1997-03-28 広三 小島 Circulation purification device for bath

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