JPS52141187A - Semiconductor laser and its liquid phase epitaxial crystal growth method - Google Patents
Semiconductor laser and its liquid phase epitaxial crystal growth methodInfo
- Publication number
- JPS52141187A JPS52141187A JP5720476A JP5720476A JPS52141187A JP S52141187 A JPS52141187 A JP S52141187A JP 5720476 A JP5720476 A JP 5720476A JP 5720476 A JP5720476 A JP 5720476A JP S52141187 A JPS52141187 A JP S52141187A
- Authority
- JP
- Japan
- Prior art keywords
- liquid phase
- semiconductor laser
- crystal growth
- growth method
- phase epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
PURPOSE: To grow a thin film free from pinholes over the entire surface of wafers by adding a small volume of Mg or Tl to a GaAs growing solution composed of Ga and As or AlxGa1-xAs growing solution composed of GaAs and Al.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5720476A JPS52141187A (en) | 1976-05-20 | 1976-05-20 | Semiconductor laser and its liquid phase epitaxial crystal growth method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5720476A JPS52141187A (en) | 1976-05-20 | 1976-05-20 | Semiconductor laser and its liquid phase epitaxial crystal growth method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52141187A true JPS52141187A (en) | 1977-11-25 |
JPS5628390B2 JPS5628390B2 (en) | 1981-07-01 |
Family
ID=13048957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5720476A Granted JPS52141187A (en) | 1976-05-20 | 1976-05-20 | Semiconductor laser and its liquid phase epitaxial crystal growth method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52141187A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5160487A (en) * | 1974-09-26 | 1976-05-26 | Int Standard Electric Corp |
-
1976
- 1976-05-20 JP JP5720476A patent/JPS52141187A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5160487A (en) * | 1974-09-26 | 1976-05-26 | Int Standard Electric Corp |
Also Published As
Publication number | Publication date |
---|---|
JPS5628390B2 (en) | 1981-07-01 |
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