JPS52141187A - Semiconductor laser and its liquid phase epitaxial crystal growth method - Google Patents

Semiconductor laser and its liquid phase epitaxial crystal growth method

Info

Publication number
JPS52141187A
JPS52141187A JP5720476A JP5720476A JPS52141187A JP S52141187 A JPS52141187 A JP S52141187A JP 5720476 A JP5720476 A JP 5720476A JP 5720476 A JP5720476 A JP 5720476A JP S52141187 A JPS52141187 A JP S52141187A
Authority
JP
Japan
Prior art keywords
liquid phase
semiconductor laser
crystal growth
growth method
phase epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5720476A
Other languages
Japanese (ja)
Other versions
JPS5628390B2 (en
Inventor
Yoshifumi Takanashi
Yoshiharu Horikoshi
Yoshitaka Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP5720476A priority Critical patent/JPS52141187A/en
Publication of JPS52141187A publication Critical patent/JPS52141187A/en
Publication of JPS5628390B2 publication Critical patent/JPS5628390B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To grow a thin film free from pinholes over the entire surface of wafers by adding a small volume of Mg or Tl to a GaAs growing solution composed of Ga and As or AlxGa1-xAs growing solution composed of GaAs and Al.
COPYRIGHT: (C)1977,JPO&Japio
JP5720476A 1976-05-20 1976-05-20 Semiconductor laser and its liquid phase epitaxial crystal growth method Granted JPS52141187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5720476A JPS52141187A (en) 1976-05-20 1976-05-20 Semiconductor laser and its liquid phase epitaxial crystal growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5720476A JPS52141187A (en) 1976-05-20 1976-05-20 Semiconductor laser and its liquid phase epitaxial crystal growth method

Publications (2)

Publication Number Publication Date
JPS52141187A true JPS52141187A (en) 1977-11-25
JPS5628390B2 JPS5628390B2 (en) 1981-07-01

Family

ID=13048957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5720476A Granted JPS52141187A (en) 1976-05-20 1976-05-20 Semiconductor laser and its liquid phase epitaxial crystal growth method

Country Status (1)

Country Link
JP (1) JPS52141187A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5160487A (en) * 1974-09-26 1976-05-26 Int Standard Electric Corp

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5160487A (en) * 1974-09-26 1976-05-26 Int Standard Electric Corp

Also Published As

Publication number Publication date
JPS5628390B2 (en) 1981-07-01

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