JPS57123897A - Forming method of compound semiconductor crystal - Google Patents

Forming method of compound semiconductor crystal

Info

Publication number
JPS57123897A
JPS57123897A JP543981A JP543981A JPS57123897A JP S57123897 A JPS57123897 A JP S57123897A JP 543981 A JP543981 A JP 543981A JP 543981 A JP543981 A JP 543981A JP S57123897 A JPS57123897 A JP S57123897A
Authority
JP
Japan
Prior art keywords
solution
semiconductor crystal
forming method
compound semiconductor
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP543981A
Other languages
Japanese (ja)
Inventor
Akira Fujimoto
Mikihiko Shimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical Tateisi Electronics Co
Priority to JP543981A priority Critical patent/JPS57123897A/en
Publication of JPS57123897A publication Critical patent/JPS57123897A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To prepare a GaAsP crystal suitable for a material of a light emitting diode, by adding a specific amount of Te as an impurity to a Ga solution to form a growing solution for the liquid-phase epitaxial method.
CONSTITUTION: Te in an amount of 0.08 atomic% or more as an impurity is added to a Ga solution as a growing solution, and the resultant solution is then used to grow a GaAsP crystal on a substrate by the liquid-phase epitaxial method. A semiconductor crystal obtained by the method is the GaAsP crystal having a flat growth face and high crystallinity.
COPYRIGHT: (C)1982,JPO&Japio
JP543981A 1981-01-17 1981-01-17 Forming method of compound semiconductor crystal Pending JPS57123897A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP543981A JPS57123897A (en) 1981-01-17 1981-01-17 Forming method of compound semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP543981A JPS57123897A (en) 1981-01-17 1981-01-17 Forming method of compound semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS57123897A true JPS57123897A (en) 1982-08-02

Family

ID=11611223

Family Applications (1)

Application Number Title Priority Date Filing Date
JP543981A Pending JPS57123897A (en) 1981-01-17 1981-01-17 Forming method of compound semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS57123897A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60161397A (en) * 1984-01-27 1985-08-23 Mitsubishi Monsanto Chem Co Liquid phase epitaxial growth method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60161397A (en) * 1984-01-27 1985-08-23 Mitsubishi Monsanto Chem Co Liquid phase epitaxial growth method
JPH0351674B2 (en) * 1984-01-27 1991-08-07 Mitsubishi Kasei Horitetsuku Kk

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