JPS57123897A - Forming method of compound semiconductor crystal - Google Patents
Forming method of compound semiconductor crystalInfo
- Publication number
- JPS57123897A JPS57123897A JP543981A JP543981A JPS57123897A JP S57123897 A JPS57123897 A JP S57123897A JP 543981 A JP543981 A JP 543981A JP 543981 A JP543981 A JP 543981A JP S57123897 A JPS57123897 A JP S57123897A
- Authority
- JP
- Japan
- Prior art keywords
- solution
- semiconductor crystal
- forming method
- compound semiconductor
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prepare a GaAsP crystal suitable for a material of a light emitting diode, by adding a specific amount of Te as an impurity to a Ga solution to form a growing solution for the liquid-phase epitaxial method.
CONSTITUTION: Te in an amount of 0.08 atomic% or more as an impurity is added to a Ga solution as a growing solution, and the resultant solution is then used to grow a GaAsP crystal on a substrate by the liquid-phase epitaxial method. A semiconductor crystal obtained by the method is the GaAsP crystal having a flat growth face and high crystallinity.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP543981A JPS57123897A (en) | 1981-01-17 | 1981-01-17 | Forming method of compound semiconductor crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP543981A JPS57123897A (en) | 1981-01-17 | 1981-01-17 | Forming method of compound semiconductor crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57123897A true JPS57123897A (en) | 1982-08-02 |
Family
ID=11611223
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP543981A Pending JPS57123897A (en) | 1981-01-17 | 1981-01-17 | Forming method of compound semiconductor crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57123897A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60161397A (en) * | 1984-01-27 | 1985-08-23 | Mitsubishi Monsanto Chem Co | Liquid phase epitaxial growth method |
-
1981
- 1981-01-17 JP JP543981A patent/JPS57123897A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60161397A (en) * | 1984-01-27 | 1985-08-23 | Mitsubishi Monsanto Chem Co | Liquid phase epitaxial growth method |
JPH0351674B2 (en) * | 1984-01-27 | 1991-08-07 | Mitsubishi Kasei Horitetsuku Kk |
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