JPS5263088A - Production of gaas light emitting diode - Google Patents
Production of gaas light emitting diodeInfo
- Publication number
- JPS5263088A JPS5263088A JP13912675A JP13912675A JPS5263088A JP S5263088 A JPS5263088 A JP S5263088A JP 13912675 A JP13912675 A JP 13912675A JP 13912675 A JP13912675 A JP 13912675A JP S5263088 A JPS5263088 A JP S5263088A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- production
- gaas
- gaas light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain a GaAs light emitting diode of high external quantum efficiency by controlling the amount of addition of Zn of a Ptype GaAs diffusion layer and P type Ga As growth layer and the thickness of the P type GaAs diffusion layer.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50139126A JPS584833B2 (en) | 1975-11-19 | 1975-11-19 | Method for manufacturing G↓aA↓s light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50139126A JPS584833B2 (en) | 1975-11-19 | 1975-11-19 | Method for manufacturing G↓aA↓s light emitting diode |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5263088A true JPS5263088A (en) | 1977-05-25 |
JPS584833B2 JPS584833B2 (en) | 1983-01-27 |
Family
ID=15238108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50139126A Expired JPS584833B2 (en) | 1975-11-19 | 1975-11-19 | Method for manufacturing G↓aA↓s light emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS584833B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61185921A (en) * | 1985-02-13 | 1986-08-19 | Matsushita Electric Ind Co Ltd | Liquid-phase epitaxial growth method |
JPS61225821A (en) * | 1985-03-29 | 1986-10-07 | Fujitsu Ltd | Apparatus for liquid phase epitaxial growth |
JPS61268023A (en) * | 1985-05-13 | 1986-11-27 | Stanley Electric Co Ltd | Manufacture of semiconductor element |
-
1975
- 1975-11-19 JP JP50139126A patent/JPS584833B2/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61185921A (en) * | 1985-02-13 | 1986-08-19 | Matsushita Electric Ind Co Ltd | Liquid-phase epitaxial growth method |
JPH0318736B2 (en) * | 1985-02-13 | 1991-03-13 | Matsushita Electric Ind Co Ltd | |
JPS61225821A (en) * | 1985-03-29 | 1986-10-07 | Fujitsu Ltd | Apparatus for liquid phase epitaxial growth |
JPH0476491B2 (en) * | 1985-03-29 | 1992-12-03 | Fujitsu Ltd | |
JPS61268023A (en) * | 1985-05-13 | 1986-11-27 | Stanley Electric Co Ltd | Manufacture of semiconductor element |
Also Published As
Publication number | Publication date |
---|---|
JPS584833B2 (en) | 1983-01-27 |
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