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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP5810176ApriorityCriticalpatent/JPS52141190A/en
Publication of JPS52141190ApublicationCriticalpatent/JPS52141190A/en
PURPOSE: To shorten rise time and increase light emission efficiency by specifying the carrier concentration of a Te-doped N type GaAs layer or Ga-doped GaAs layer both at 5 × 1017/cm3 to 2 × 1018/cm3.