JPS5353991A - Gallium phosphide light emitting element - Google Patents
Gallium phosphide light emitting elementInfo
- Publication number
- JPS5353991A JPS5353991A JP12920976A JP12920976A JPS5353991A JP S5353991 A JPS5353991 A JP S5353991A JP 12920976 A JP12920976 A JP 12920976A JP 12920976 A JP12920976 A JP 12920976A JP S5353991 A JPS5353991 A JP S5353991A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting element
- gallium phosphide
- phosphide light
- introduction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: The increase in crystal defects owing to the introduction of nitrogen of a high concentration and the probability of non-radiative transition is reduced by providing a concentration gradient layer concerning nitrogen introduction.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12920976A JPS5353991A (en) | 1976-10-26 | 1976-10-26 | Gallium phosphide light emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12920976A JPS5353991A (en) | 1976-10-26 | 1976-10-26 | Gallium phosphide light emitting element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5353991A true JPS5353991A (en) | 1978-05-16 |
Family
ID=15003822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12920976A Pending JPS5353991A (en) | 1976-10-26 | 1976-10-26 | Gallium phosphide light emitting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5353991A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60187013A (en) * | 1984-03-06 | 1985-09-24 | Shin Etsu Handotai Co Ltd | Epitaxial wafer |
US7928424B2 (en) * | 2004-03-11 | 2011-04-19 | Epistar Corporation | Nitride-based light-emitting device |
US8562738B2 (en) | 2004-03-11 | 2013-10-22 | Epistar Corporation | Nitride-based light-emitting device |
US9524869B2 (en) | 2004-03-11 | 2016-12-20 | Epistar Corporation | Nitride-based semiconductor light-emitting device |
-
1976
- 1976-10-26 JP JP12920976A patent/JPS5353991A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60187013A (en) * | 1984-03-06 | 1985-09-24 | Shin Etsu Handotai Co Ltd | Epitaxial wafer |
US7928424B2 (en) * | 2004-03-11 | 2011-04-19 | Epistar Corporation | Nitride-based light-emitting device |
US8536565B2 (en) | 2004-03-11 | 2013-09-17 | Epistar Corporation | Nitride-based light-emitting device |
US8562738B2 (en) | 2004-03-11 | 2013-10-22 | Epistar Corporation | Nitride-based light-emitting device |
US9524869B2 (en) | 2004-03-11 | 2016-12-20 | Epistar Corporation | Nitride-based semiconductor light-emitting device |
US10553749B2 (en) | 2004-03-11 | 2020-02-04 | Epistar Corporation | Nitride-based semiconductor light-emitting device |
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