JPS52139372A - Selective etching method of thin films - Google Patents

Selective etching method of thin films

Info

Publication number
JPS52139372A
JPS52139372A JP5537576A JP5537576A JPS52139372A JP S52139372 A JPS52139372 A JP S52139372A JP 5537576 A JP5537576 A JP 5537576A JP 5537576 A JP5537576 A JP 5537576A JP S52139372 A JPS52139372 A JP S52139372A
Authority
JP
Japan
Prior art keywords
thin films
etching method
selective etching
platinum
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5537576A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Yoshimichi Hirobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5537576A priority Critical patent/JPS52139372A/en
Publication of JPS52139372A publication Critical patent/JPS52139372A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To selectively plasma-etch the thin film of platinum-group alloy or platinum-group compound with a mixed gas of fluorine-base compound and oxygen.
COPYRIGHT: (C)1977,JPO&Japio
JP5537576A 1976-05-17 1976-05-17 Selective etching method of thin films Pending JPS52139372A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5537576A JPS52139372A (en) 1976-05-17 1976-05-17 Selective etching method of thin films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5537576A JPS52139372A (en) 1976-05-17 1976-05-17 Selective etching method of thin films

Publications (1)

Publication Number Publication Date
JPS52139372A true JPS52139372A (en) 1977-11-21

Family

ID=12996729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5537576A Pending JPS52139372A (en) 1976-05-17 1976-05-17 Selective etching method of thin films

Country Status (1)

Country Link
JP (1) JPS52139372A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789226A (en) * 1980-11-19 1982-06-03 Ibm Method of etching silicon nitride layer
JPS60148123A (en) * 1983-12-30 1985-08-05 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Dry etching method
JP2001358133A (en) * 2000-05-30 2001-12-26 Sharp Corp Method for performing anisotropic plasma etching using fluorochemical substance that is non- chlorofluorocarbon
EP1313896A2 (en) * 2000-08-28 2003-05-28 Reflectivity Inc. Apparatus and method for flow of process gas in an ultra-clean environment

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5789226A (en) * 1980-11-19 1982-06-03 Ibm Method of etching silicon nitride layer
JPS60148123A (en) * 1983-12-30 1985-08-05 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Dry etching method
JP2001358133A (en) * 2000-05-30 2001-12-26 Sharp Corp Method for performing anisotropic plasma etching using fluorochemical substance that is non- chlorofluorocarbon
EP1313896A2 (en) * 2000-08-28 2003-05-28 Reflectivity Inc. Apparatus and method for flow of process gas in an ultra-clean environment
EP1313896A4 (en) * 2000-08-28 2006-02-15 Reflectivity Inc Apparatus and method for flow of process gas in an ultra-clean environment

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