JPS5382280A - Gallium phosphide emtting device - Google Patents

Gallium phosphide emtting device

Info

Publication number
JPS5382280A
JPS5382280A JP15736076A JP15736076A JPS5382280A JP S5382280 A JPS5382280 A JP S5382280A JP 15736076 A JP15736076 A JP 15736076A JP 15736076 A JP15736076 A JP 15736076A JP S5382280 A JPS5382280 A JP S5382280A
Authority
JP
Japan
Prior art keywords
gallium phosphide
emtting
type gap
emtting device
efficeincy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15736076A
Other languages
Japanese (ja)
Other versions
JPS5412400B2 (en
Inventor
Akihiro Hachiman
Masaru Kawachi
Makoto Naito
Akinobu Kasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15736076A priority Critical patent/JPS5382280A/en
Publication of JPS5382280A publication Critical patent/JPS5382280A/en
Publication of JPS5412400B2 publication Critical patent/JPS5412400B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To make light emission efficeincy extremely high by specifying the impurity concentrations of respective layers and residual oxygen concentrations in a N-N-P tyep light emitting device formed by N type Gap and P type GaP.
COPYRIGHT: (C)1978,JPO&Japio
JP15736076A 1976-12-28 1976-12-28 Gallium phosphide emtting device Granted JPS5382280A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15736076A JPS5382280A (en) 1976-12-28 1976-12-28 Gallium phosphide emtting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15736076A JPS5382280A (en) 1976-12-28 1976-12-28 Gallium phosphide emtting device

Publications (2)

Publication Number Publication Date
JPS5382280A true JPS5382280A (en) 1978-07-20
JPS5412400B2 JPS5412400B2 (en) 1979-05-22

Family

ID=15647954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15736076A Granted JPS5382280A (en) 1976-12-28 1976-12-28 Gallium phosphide emtting device

Country Status (1)

Country Link
JP (1) JPS5382280A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302839A (en) * 1991-07-29 1994-04-12 Shin-Etsu Handotai Co., Ltd. Light emitting diode having an improved GaP compound substrate for an epitaxial growth layer thereon
EP0597402A1 (en) * 1992-11-07 1994-05-18 Shin-Etsu Handotai Kabushiki Kaisha A GaP light emitting element substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106593A (en) * 1974-01-29 1975-08-22

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106593A (en) * 1974-01-29 1975-08-22

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5302839A (en) * 1991-07-29 1994-04-12 Shin-Etsu Handotai Co., Ltd. Light emitting diode having an improved GaP compound substrate for an epitaxial growth layer thereon
EP0597402A1 (en) * 1992-11-07 1994-05-18 Shin-Etsu Handotai Kabushiki Kaisha A GaP light emitting element substrate
JPH06151961A (en) * 1992-11-07 1994-05-31 Shin Etsu Handotai Co Ltd Substrate for gap-based light emitting element
US5349208A (en) * 1992-11-07 1994-09-20 Shin Etsu Handotai Kabushiki Kaisha GaP light emitting element substrate with oxygen doped buffer

Also Published As

Publication number Publication date
JPS5412400B2 (en) 1979-05-22

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