JPS5382280A - Gallium phosphide emtting device - Google Patents
Gallium phosphide emtting deviceInfo
- Publication number
- JPS5382280A JPS5382280A JP15736076A JP15736076A JPS5382280A JP S5382280 A JPS5382280 A JP S5382280A JP 15736076 A JP15736076 A JP 15736076A JP 15736076 A JP15736076 A JP 15736076A JP S5382280 A JPS5382280 A JP S5382280A
- Authority
- JP
- Japan
- Prior art keywords
- gallium phosphide
- emtting
- type gap
- emtting device
- efficeincy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To make light emission efficeincy extremely high by specifying the impurity concentrations of respective layers and residual oxygen concentrations in a N-N-P tyep light emitting device formed by N type Gap and P type GaP.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15736076A JPS5382280A (en) | 1976-12-28 | 1976-12-28 | Gallium phosphide emtting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15736076A JPS5382280A (en) | 1976-12-28 | 1976-12-28 | Gallium phosphide emtting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5382280A true JPS5382280A (en) | 1978-07-20 |
JPS5412400B2 JPS5412400B2 (en) | 1979-05-22 |
Family
ID=15647954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15736076A Granted JPS5382280A (en) | 1976-12-28 | 1976-12-28 | Gallium phosphide emtting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5382280A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5302839A (en) * | 1991-07-29 | 1994-04-12 | Shin-Etsu Handotai Co., Ltd. | Light emitting diode having an improved GaP compound substrate for an epitaxial growth layer thereon |
EP0597402A1 (en) * | 1992-11-07 | 1994-05-18 | Shin-Etsu Handotai Kabushiki Kaisha | A GaP light emitting element substrate |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50106593A (en) * | 1974-01-29 | 1975-08-22 |
-
1976
- 1976-12-28 JP JP15736076A patent/JPS5382280A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50106593A (en) * | 1974-01-29 | 1975-08-22 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5302839A (en) * | 1991-07-29 | 1994-04-12 | Shin-Etsu Handotai Co., Ltd. | Light emitting diode having an improved GaP compound substrate for an epitaxial growth layer thereon |
EP0597402A1 (en) * | 1992-11-07 | 1994-05-18 | Shin-Etsu Handotai Kabushiki Kaisha | A GaP light emitting element substrate |
JPH06151961A (en) * | 1992-11-07 | 1994-05-31 | Shin Etsu Handotai Co Ltd | Substrate for gap-based light emitting element |
US5349208A (en) * | 1992-11-07 | 1994-09-20 | Shin Etsu Handotai Kabushiki Kaisha | GaP light emitting element substrate with oxygen doped buffer |
Also Published As
Publication number | Publication date |
---|---|
JPS5412400B2 (en) | 1979-05-22 |
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