JPS535583A - Manufacture of thyristor - Google Patents
Manufacture of thyristorInfo
- Publication number
- JPS535583A JPS535583A JP7898976A JP7898976A JPS535583A JP S535583 A JPS535583 A JP S535583A JP 7898976 A JP7898976 A JP 7898976A JP 7898976 A JP7898976 A JP 7898976A JP S535583 A JPS535583 A JP S535583A
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- manufacture
- type region
- life time
- gettering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE: To lower the life time of N-type region using Al and Ga for the impurity to form P-type region and to obtain the prescribed life time by giving a gettering to phosphor.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7898976A JPS535583A (en) | 1976-07-05 | 1976-07-05 | Manufacture of thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7898976A JPS535583A (en) | 1976-07-05 | 1976-07-05 | Manufacture of thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS535583A true JPS535583A (en) | 1978-01-19 |
JPS5726424B2 JPS5726424B2 (en) | 1982-06-04 |
Family
ID=13677295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7898976A Granted JPS535583A (en) | 1976-07-05 | 1976-07-05 | Manufacture of thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS535583A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008136649A (en) * | 2006-12-01 | 2008-06-19 | Eishin Denki Kk | Milk warmer |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6070223A (en) * | 1983-09-22 | 1985-04-22 | Toyo Kensetsu Kk | Leveling of rubble mound and striking head for rough leveling |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS492865A (en) * | 1972-04-21 | 1974-01-11 | ||
JPS4915383A (en) * | 1972-05-17 | 1974-02-09 |
-
1976
- 1976-07-05 JP JP7898976A patent/JPS535583A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS492865A (en) * | 1972-04-21 | 1974-01-11 | ||
JPS4915383A (en) * | 1972-05-17 | 1974-02-09 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008136649A (en) * | 2006-12-01 | 2008-06-19 | Eishin Denki Kk | Milk warmer |
Also Published As
Publication number | Publication date |
---|---|
JPS5726424B2 (en) | 1982-06-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5395571A (en) | Semiconductor device | |
JPS535583A (en) | Manufacture of thyristor | |
JPS51118395A (en) | Semiconductor emitting unit and manufacturing process | |
JPS5366384A (en) | Thyristor | |
JPS5228888A (en) | Emission semiconductor device | |
JPS5274280A (en) | Semiconductor device and its production | |
JPS5313366A (en) | Manufacture of mesa-type semiconductor device | |
JPS5314585A (en) | Semiconductor device | |
JPS5373990A (en) | Semiconductor device | |
JPS5270761A (en) | Semiconductor device | |
JPS5272580A (en) | Production of semiconductor device | |
JPS5410682A (en) | Production of semiconductor elements | |
JPS51146194A (en) | Diode device fabrication method | |
JPS53145580A (en) | Pnp transistor | |
JPS5250165A (en) | Semiconductor diffusion method | |
JPS5217768A (en) | Production method of semi-conductor device | |
JPS533071A (en) | Semiconductor device | |
JPS51113578A (en) | Semi-conductor elements | |
JPS536570A (en) | Preparation of semiconductor device | |
JPS5228885A (en) | Method for production of semiconductive emitter device | |
JPS536571A (en) | Preparation of semiconductor device | |
JPS527673A (en) | Method of forming pn junction | |
JPS5338282A (en) | Production of gallium arsenide phophide diode | |
JPS5422157A (en) | Formation method of selective impurity diffusion region into iii-v group compound semiconductor | |
JPS52178A (en) | Pnp transistor |