JPS5313366A - Manufacture of mesa-type semiconductor device - Google Patents
Manufacture of mesa-type semiconductor deviceInfo
- Publication number
- JPS5313366A JPS5313366A JP8792376A JP8792376A JPS5313366A JP S5313366 A JPS5313366 A JP S5313366A JP 8792376 A JP8792376 A JP 8792376A JP 8792376 A JP8792376 A JP 8792376A JP S5313366 A JPS5313366 A JP S5313366A
- Authority
- JP
- Japan
- Prior art keywords
- mesa
- semiconductor device
- type semiconductor
- manufacture
- gentle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Weting (AREA)
Abstract
PURPOSE: To obtain a withstand-high-voltage meas type semiconductor device by forming the shoulder part of a mesa in gentle.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8792376A JPS5313366A (en) | 1976-07-22 | 1976-07-22 | Manufacture of mesa-type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8792376A JPS5313366A (en) | 1976-07-22 | 1976-07-22 | Manufacture of mesa-type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5313366A true JPS5313366A (en) | 1978-02-06 |
Family
ID=13928430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8792376A Pending JPS5313366A (en) | 1976-07-22 | 1976-07-22 | Manufacture of mesa-type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5313366A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4740477A (en) * | 1985-10-04 | 1988-04-26 | General Instrument Corporation | Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics |
JPS63265914A (en) * | 1987-04-23 | 1988-11-02 | Sanyo Chem Ind Ltd | Production of epoxy resin |
US4980315A (en) * | 1988-07-18 | 1990-12-25 | General Instrument Corporation | Method of making a passivated P-N junction in mesa semiconductor structure |
US5166769A (en) * | 1988-07-18 | 1992-11-24 | General Instrument Corporation | Passitvated mesa semiconductor and method for making same |
-
1976
- 1976-07-22 JP JP8792376A patent/JPS5313366A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4740477A (en) * | 1985-10-04 | 1988-04-26 | General Instrument Corporation | Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics |
JPS63265914A (en) * | 1987-04-23 | 1988-11-02 | Sanyo Chem Ind Ltd | Production of epoxy resin |
US4980315A (en) * | 1988-07-18 | 1990-12-25 | General Instrument Corporation | Method of making a passivated P-N junction in mesa semiconductor structure |
US5166769A (en) * | 1988-07-18 | 1992-11-24 | General Instrument Corporation | Passitvated mesa semiconductor and method for making same |
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