JPS5274280A - Semiconductor device and its production - Google Patents

Semiconductor device and its production

Info

Publication number
JPS5274280A
JPS5274280A JP14961475A JP14961475A JPS5274280A JP S5274280 A JPS5274280 A JP S5274280A JP 14961475 A JP14961475 A JP 14961475A JP 14961475 A JP14961475 A JP 14961475A JP S5274280 A JPS5274280 A JP S5274280A
Authority
JP
Japan
Prior art keywords
semiconductor device
production
electrode
type semiconductor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14961475A
Other languages
Japanese (ja)
Other versions
JPS5413348B2 (en
Inventor
Mitsuhiro Mori
Makoto Morioka
Yuichi Ono
Kazuhiro Ito
Akizumi Sano
Kazuhiro Kurata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14961475A priority Critical patent/JPS5274280A/en
Publication of JPS5274280A publication Critical patent/JPS5274280A/en
Publication of JPS5413348B2 publication Critical patent/JPS5413348B2/ja
Granted legal-status Critical Current

Links

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  • Electrodes Of Semiconductors (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To simplify electrode forming process forming ohmic electrode using the same electrode material, in the P type and N type semiconductor regions of a planer type semiconductor device using a group III-V compound semiconductor material.
COPYRIGHT: (C)1977,JPO&Japio
JP14961475A 1975-12-17 1975-12-17 Semiconductor device and its production Granted JPS5274280A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14961475A JPS5274280A (en) 1975-12-17 1975-12-17 Semiconductor device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14961475A JPS5274280A (en) 1975-12-17 1975-12-17 Semiconductor device and its production

Publications (2)

Publication Number Publication Date
JPS5274280A true JPS5274280A (en) 1977-06-22
JPS5413348B2 JPS5413348B2 (en) 1979-05-30

Family

ID=15479047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14961475A Granted JPS5274280A (en) 1975-12-17 1975-12-17 Semiconductor device and its production

Country Status (1)

Country Link
JP (1) JPS5274280A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658231A (en) * 1979-10-01 1981-05-21 Western Electric Co Method of forming electric contact in gaas active region of semiconductor device
US5036023A (en) * 1989-08-16 1991-07-30 At&T Bell Laboratories Rapid thermal processing method of making a semiconductor device
US5917243A (en) * 1994-12-22 1999-06-29 Sony Corporation Semiconductor device having ohmic electrode and method of manufacturing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103794664B (en) * 2014-02-28 2016-01-20 淮阴师范学院 A kind of N-shaped Semi-insulating GaAs Ohm contact electrode material and preparation method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5145987A (en) * 1974-10-17 1976-04-19 Oki Electric Ind Co Ltd pn setsugohatsukodaioodo

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5145987A (en) * 1974-10-17 1976-04-19 Oki Electric Ind Co Ltd pn setsugohatsukodaioodo

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5658231A (en) * 1979-10-01 1981-05-21 Western Electric Co Method of forming electric contact in gaas active region of semiconductor device
US5036023A (en) * 1989-08-16 1991-07-30 At&T Bell Laboratories Rapid thermal processing method of making a semiconductor device
US5917243A (en) * 1994-12-22 1999-06-29 Sony Corporation Semiconductor device having ohmic electrode and method of manufacturing the same
US5924002A (en) * 1994-12-22 1999-07-13 Sony Corporation Method of manufacturing a semiconductor device having ohmic electrode

Also Published As

Publication number Publication date
JPS5413348B2 (en) 1979-05-30

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