JPS5228879A - Semiconductor device and method for its production - Google Patents
Semiconductor device and method for its productionInfo
- Publication number
- JPS5228879A JPS5228879A JP10537875A JP10537875A JPS5228879A JP S5228879 A JPS5228879 A JP S5228879A JP 10537875 A JP10537875 A JP 10537875A JP 10537875 A JP10537875 A JP 10537875A JP S5228879 A JPS5228879 A JP S5228879A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- polucrystalline
- imrove
- diffusing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To make base width thin and to imrove device characteristics by injecting impurities into polucrystalline Si layer and by diffusing them into the substrate in the solid state.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50105378A JPS5914898B2 (en) | 1975-08-29 | 1975-08-29 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50105378A JPS5914898B2 (en) | 1975-08-29 | 1975-08-29 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5228879A true JPS5228879A (en) | 1977-03-04 |
JPS5914898B2 JPS5914898B2 (en) | 1984-04-06 |
Family
ID=14406007
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50105378A Expired JPS5914898B2 (en) | 1975-08-29 | 1975-08-29 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5914898B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5310979A (en) * | 1976-07-16 | 1978-01-31 | Mitsubishi Electric Corp | Semiconductor device and its production |
JPS57168249U (en) * | 1981-04-16 | 1982-10-23 | ||
JPS58154267A (en) * | 1982-03-08 | 1983-09-13 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of producing bipolar transistor |
US5387813A (en) * | 1992-09-25 | 1995-02-07 | National Semiconductor Corporation | Transistors with emitters having at least three sides |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4940884A (en) * | 1972-08-25 | 1974-04-17 |
-
1975
- 1975-08-29 JP JP50105378A patent/JPS5914898B2/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4940884A (en) * | 1972-08-25 | 1974-04-17 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5310979A (en) * | 1976-07-16 | 1978-01-31 | Mitsubishi Electric Corp | Semiconductor device and its production |
JPS57168249U (en) * | 1981-04-16 | 1982-10-23 | ||
JPS58154267A (en) * | 1982-03-08 | 1983-09-13 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Method of producing bipolar transistor |
JPH0376575B2 (en) * | 1982-03-08 | 1991-12-05 | Intaanashonaru Bijinesu Mashiinzu Corp | |
US5387813A (en) * | 1992-09-25 | 1995-02-07 | National Semiconductor Corporation | Transistors with emitters having at least three sides |
US5508552A (en) * | 1992-09-25 | 1996-04-16 | National Semiconductor Corporation | Transistors with multiple emitters, and transistors with substantially square base emitter junctions |
Also Published As
Publication number | Publication date |
---|---|
JPS5914898B2 (en) | 1984-04-06 |
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