JPS5213788A - Production method of semiconductor device - Google Patents

Production method of semiconductor device

Info

Publication number
JPS5213788A
JPS5213788A JP50089252A JP8925275A JPS5213788A JP S5213788 A JPS5213788 A JP S5213788A JP 50089252 A JP50089252 A JP 50089252A JP 8925275 A JP8925275 A JP 8925275A JP S5213788 A JPS5213788 A JP S5213788A
Authority
JP
Japan
Prior art keywords
semiconductor device
production method
stableness
accumulated
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50089252A
Other languages
Japanese (ja)
Inventor
Yasuo Wada
Hiroo Usui
Kikuji Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50089252A priority Critical patent/JPS5213788A/en
Publication of JPS5213788A publication Critical patent/JPS5213788A/en
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: In order to make the formation of high resistance layer with high reliability and stableness, by means of implanting nitrogen ion on the polysilicon layer being accumulated on a insulation film.
COPYRIGHT: (C)1977,JPO&Japio
JP50089252A 1975-07-23 1975-07-23 Production method of semiconductor device Pending JPS5213788A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50089252A JPS5213788A (en) 1975-07-23 1975-07-23 Production method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50089252A JPS5213788A (en) 1975-07-23 1975-07-23 Production method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5213788A true JPS5213788A (en) 1977-02-02

Family

ID=13965555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50089252A Pending JPS5213788A (en) 1975-07-23 1975-07-23 Production method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5213788A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989452A (en) * 1982-10-07 1984-05-23 シ−・アイ・アイ・ハネウエル・ブル Method of forming resistor in polycrystalline semiconductor material, resistor formed by same method and integrated circuit device
JPS59152657A (en) * 1983-02-18 1984-08-31 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming polycrystalline silicon layer with high sheet resistance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5989452A (en) * 1982-10-07 1984-05-23 シ−・アイ・アイ・ハネウエル・ブル Method of forming resistor in polycrystalline semiconductor material, resistor formed by same method and integrated circuit device
JPS59152657A (en) * 1983-02-18 1984-08-31 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Method of forming polycrystalline silicon layer with high sheet resistance

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