JPS546461A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS546461A JPS546461A JP7110477A JP7110477A JPS546461A JP S546461 A JPS546461 A JP S546461A JP 7110477 A JP7110477 A JP 7110477A JP 7110477 A JP7110477 A JP 7110477A JP S546461 A JPS546461 A JP S546461A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- forming
- density
- highly reliable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To obtain a highly reliable device by previously forming the surface of more than 5×1018 cm-3 in density through ion injection and by forming platinum silicide on the surface.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7110477A JPS546461A (en) | 1977-06-17 | 1977-06-17 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7110477A JPS546461A (en) | 1977-06-17 | 1977-06-17 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS546461A true JPS546461A (en) | 1979-01-18 |
Family
ID=13450900
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7110477A Pending JPS546461A (en) | 1977-06-17 | 1977-06-17 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS546461A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5223446A (en) * | 1988-11-30 | 1993-06-29 | Sharp Kabushiki Kaisha | Semiconductor device with a photodetector switching device grown on a recrystallized monocrystal silicon film |
US6051490A (en) * | 1991-11-29 | 2000-04-18 | Sony Corporation | Method of forming wirings |
US6268290B1 (en) * | 1991-11-19 | 2001-07-31 | Sony Corporation | Method of forming wirings |
-
1977
- 1977-06-17 JP JP7110477A patent/JPS546461A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5223446A (en) * | 1988-11-30 | 1993-06-29 | Sharp Kabushiki Kaisha | Semiconductor device with a photodetector switching device grown on a recrystallized monocrystal silicon film |
US6268290B1 (en) * | 1991-11-19 | 2001-07-31 | Sony Corporation | Method of forming wirings |
US6051490A (en) * | 1991-11-29 | 2000-04-18 | Sony Corporation | Method of forming wirings |
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