JPS5367389A - Production of semiconductor laser - Google Patents
Production of semiconductor laserInfo
- Publication number
- JPS5367389A JPS5367389A JP14230676A JP14230676A JPS5367389A JP S5367389 A JPS5367389 A JP S5367389A JP 14230676 A JP14230676 A JP 14230676A JP 14230676 A JP14230676 A JP 14230676A JP S5367389 A JPS5367389 A JP S5367389A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- production
- substrate
- diffusing
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To lower threshold current density by diffusing an impurity of conductivity type differing from that of a substrate to the surface of the semiconductor substrate in a substrate-buried type semiconductor laser.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14230676A JPS5367389A (en) | 1976-11-29 | 1976-11-29 | Production of semiconductor laser |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14230676A JPS5367389A (en) | 1976-11-29 | 1976-11-29 | Production of semiconductor laser |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5367389A true JPS5367389A (en) | 1978-06-15 |
Family
ID=15312290
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14230676A Pending JPS5367389A (en) | 1976-11-29 | 1976-11-29 | Production of semiconductor laser |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5367389A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4783245A (en) * | 1986-03-25 | 1988-11-08 | Sumitomo Light Metal Industries, Ltd. | Process and apparatus for producing alloy containing terbium and/or gadolinium |
US5335241A (en) * | 1990-08-30 | 1994-08-02 | Sharp Kabushiki Kaisha | Buried stripe type semiconductor laser device |
-
1976
- 1976-11-29 JP JP14230676A patent/JPS5367389A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4783245A (en) * | 1986-03-25 | 1988-11-08 | Sumitomo Light Metal Industries, Ltd. | Process and apparatus for producing alloy containing terbium and/or gadolinium |
US5335241A (en) * | 1990-08-30 | 1994-08-02 | Sharp Kabushiki Kaisha | Buried stripe type semiconductor laser device |
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