JPS51118395A - Semiconductor emitting unit and manufacturing process - Google Patents

Semiconductor emitting unit and manufacturing process

Info

Publication number
JPS51118395A
JPS51118395A JP4396775A JP4396775A JPS51118395A JP S51118395 A JPS51118395 A JP S51118395A JP 4396775 A JP4396775 A JP 4396775A JP 4396775 A JP4396775 A JP 4396775A JP S51118395 A JPS51118395 A JP S51118395A
Authority
JP
Japan
Prior art keywords
emitting unit
semiconductor emitting
semiconductor
deneity
small current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4396775A
Other languages
Japanese (ja)
Other versions
JPS5810875B2 (en
Inventor
Morio Inoue
Kunio Ito
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Priority to JP4396775A priority Critical patent/JPS5810875B2/ja
Publication of JPS51118395A publication Critical patent/JPS51118395A/en
Priority claimed from US05/947,419 external-priority patent/US4188244A/en
Publication of JPS5810875B2 publication Critical patent/JPS5810875B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227Buried mesa structure ; Striped active layer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004Devices characterised by their operation
    • H01L33/002Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/2207GaAsP based
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2211Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on II-VI materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227Buried mesa structure ; Striped active layer
    • H01S5/2275Buried mesa structure ; Striped active layer mesa created by etching
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Abstract

PURPOSE: To get semiconductor unit driven at small current deneity.
COPYRIGHT: (C)1976,JPO&Japio
JP4396775A 1975-04-10 1975-04-10 Expired JPS5810875B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4396775A JPS5810875B2 (en) 1975-04-10 1975-04-10

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP4396775A JPS5810875B2 (en) 1975-04-10 1975-04-10
CA249,959A CA1065461A (en) 1975-04-10 1976-04-09 Semiconductor light-emitting device and method of making of the same
GB1457376A GB1542438A (en) 1975-04-10 1976-04-09 Semiconductor light-emitting device and making of the same
US05/947,419 US4188244A (en) 1975-04-10 1978-10-02 Method of making a semiconductor light-emitting device utilizing low-temperature vapor-phase deposition

Publications (2)

Publication Number Publication Date
JPS51118395A true JPS51118395A (en) 1976-10-18
JPS5810875B2 JPS5810875B2 (en) 1983-02-28

Family

ID=12678467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4396775A Expired JPS5810875B2 (en) 1975-04-10 1975-04-10

Country Status (3)

Country Link
JP (1) JPS5810875B2 (en)
CA (1) CA1065461A (en)
GB (1) GB1542438A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5390786A (en) * 1977-01-20 1978-08-09 Matsushita Electric Ind Co Ltd Semiconductor light emitting device and its production
JPS5425183A (en) * 1977-07-27 1979-02-24 Nec Corp Manufacture for semiconductor laser device
JPS56116688A (en) * 1980-02-19 1981-09-12 Sharp Corp Semiconductor laser device
JPS6041280A (en) * 1984-07-20 1985-03-04 Hitachi Ltd Semiconductor laser
JPS60192468U (en) * 1984-08-29 1985-12-20
JPS61284985A (en) * 1985-06-12 1986-12-15 Hitachi Ltd Manufacture of semiconductor laser device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4706254A (en) * 1983-05-12 1987-11-10 Canon Kabushiki Kaisha Semiconductor device and its fabrication
JPH0531957A (en) * 1991-05-23 1993-02-09 Canon Inc Light emitting device, optical writing printer head using the same and optical printer using the same head

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5390786A (en) * 1977-01-20 1978-08-09 Matsushita Electric Ind Co Ltd Semiconductor light emitting device and its production
JPS5425183A (en) * 1977-07-27 1979-02-24 Nec Corp Manufacture for semiconductor laser device
JPS56116688A (en) * 1980-02-19 1981-09-12 Sharp Corp Semiconductor laser device
JPH0147028B2 (en) * 1980-02-19 1989-10-12 Sharp Kk
JPS6041280A (en) * 1984-07-20 1985-03-04 Hitachi Ltd Semiconductor laser
JPS6343911B2 (en) * 1984-07-20 1988-09-01 Hitachi Ltd
JPS60192468U (en) * 1984-08-29 1985-12-20
JPS61284985A (en) * 1985-06-12 1986-12-15 Hitachi Ltd Manufacture of semiconductor laser device

Also Published As

Publication number Publication date
CA1065461A (en) 1979-10-30
JPS5810875B2 (en) 1983-02-28
GB1542438A (en) 1979-03-21
CA1065461A1 (en)

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