JPS5273673A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5273673A
JPS5273673A JP14989675A JP14989675A JPS5273673A JP S5273673 A JPS5273673 A JP S5273673A JP 14989675 A JP14989675 A JP 14989675A JP 14989675 A JP14989675 A JP 14989675A JP S5273673 A JPS5273673 A JP S5273673A
Authority
JP
Japan
Prior art keywords
semiconductor
production
deterioration
induced
iii
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14989675A
Other languages
Japanese (ja)
Other versions
JPS5942470B2 (en
Inventor
Hidekazu Okabayashi
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP14989675A priority Critical patent/JPS5942470B2/ja
Publication of JPS5273673A publication Critical patent/JPS5273673A/en
Publication of JPS5942470B2 publication Critical patent/JPS5942470B2/ja
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To prevent the deterioration in optical and electrical characteristics induced by the heat treatment of a group III-V semiconductor substrate.
COPYRIGHT: (C)1977,JPO&Japio
JP14989675A 1975-12-15 1975-12-15 Expired JPS5942470B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14989675A JPS5942470B2 (en) 1975-12-15 1975-12-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14989675A JPS5942470B2 (en) 1975-12-15 1975-12-15

Publications (2)

Publication Number Publication Date
JPS5273673A true JPS5273673A (en) 1977-06-20
JPS5942470B2 JPS5942470B2 (en) 1984-10-15

Family

ID=15484976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14989675A Expired JPS5942470B2 (en) 1975-12-15 1975-12-15

Country Status (1)

Country Link
JP (1) JPS5942470B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4472206A (en) * 1982-11-10 1984-09-18 International Business Machines Corporation Method of activating implanted impurities in broad area compound semiconductors by short time contact annealing
US5047370A (en) * 1988-10-31 1991-09-10 Nippon Mining Co., Ltd. Method for producing compound semiconductor single crystal substrates

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4472206A (en) * 1982-11-10 1984-09-18 International Business Machines Corporation Method of activating implanted impurities in broad area compound semiconductors by short time contact annealing
US5047370A (en) * 1988-10-31 1991-09-10 Nippon Mining Co., Ltd. Method for producing compound semiconductor single crystal substrates

Also Published As

Publication number Publication date
JPS5942470B2 (en) 1984-10-15

Similar Documents

Publication Publication Date Title
JPS51123561A (en) Production method of semicondvctor device
JPS51118395A (en) Semiconductor emitting unit and manufacturing process
JPS5273673A (en) Production of semiconductor device
JPS51134566A (en) Semiconductor unit manufacturing process
JPS5228879A (en) Semiconductor device and method for its production
JPS5219975A (en) Semiconductor device
JPS51145267A (en) Manufacture of semiconductor device
JPS5252370A (en) Fabrication of glass-sealed semiconductor device
JPS5261956A (en) Production of semiconductor device
JPS51112292A (en) Semiconductor device
JPS528787A (en) Semiconductor device process
JPS52179A (en) Method of fabricating semiconductor
JPS5363866A (en) Production of semiconductor device
JPS51150286A (en) Production method of semiconductor device
JPS532075A (en) Appraisal method for semiconductor crystal
JPS5237789A (en) Process for production of photovoltaic elements
JPS51132762A (en) Heat-treatment method of semiconductor device
JPS51151089A (en) Manufacturing method of a semiconductor
JPS5236978A (en) Process for production of semiconductor devices
JPS51151071A (en) Manufacturing method of a semiconductor apparatus
JPS5270772A (en) Semiconductor rectifier
JPS51132985A (en) Semiconductor device
JPS5379372A (en) Production of silicon semoconductor device
JPS51140571A (en) Method for forming a semiconductor protective film
JPS52103963A (en) Semiconductor device and its manufacturing method