JPS5273673A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS5273673A JPS5273673A JP14989675A JP14989675A JPS5273673A JP S5273673 A JPS5273673 A JP S5273673A JP 14989675 A JP14989675 A JP 14989675A JP 14989675 A JP14989675 A JP 14989675A JP S5273673 A JPS5273673 A JP S5273673A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- deterioration
- optical
- prevent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000003287 optical Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Abstract
PURPOSE: To prevent the deterioration in optical and electrical characteristics induced by the heat treatment of a group III-V semiconductor substrate.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14989675A JPS5942470B2 (en) | 1975-12-15 | 1975-12-15 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14989675A JPS5942470B2 (en) | 1975-12-15 | 1975-12-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5273673A true JPS5273673A (en) | 1977-06-20 |
JPS5942470B2 JPS5942470B2 (en) | 1984-10-15 |
Family
ID=15484976
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14989675A Expired JPS5942470B2 (en) | 1975-12-15 | 1975-12-15 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5942470B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4472206A (en) * | 1982-11-10 | 1984-09-18 | International Business Machines Corporation | Method of activating implanted impurities in broad area compound semiconductors by short time contact annealing |
US5047370A (en) * | 1988-10-31 | 1991-09-10 | Nippon Mining Co., Ltd. | Method for producing compound semiconductor single crystal substrates |
-
1975
- 1975-12-15 JP JP14989675A patent/JPS5942470B2/ja not_active Expired
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4472206A (en) * | 1982-11-10 | 1984-09-18 | International Business Machines Corporation | Method of activating implanted impurities in broad area compound semiconductors by short time contact annealing |
US5047370A (en) * | 1988-10-31 | 1991-09-10 | Nippon Mining Co., Ltd. | Method for producing compound semiconductor single crystal substrates |
Also Published As
Publication number | Publication date |
---|---|
JPS5942470B2 (en) | 1984-10-15 |
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