JPS5273673A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5273673A
JPS5273673A JP14989675A JP14989675A JPS5273673A JP S5273673 A JPS5273673 A JP S5273673A JP 14989675 A JP14989675 A JP 14989675A JP 14989675 A JP14989675 A JP 14989675A JP S5273673 A JPS5273673 A JP S5273673A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
deterioration
optical
prevent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14989675A
Other languages
Japanese (ja)
Other versions
JPS5942470B2 (en
Inventor
Hidekazu Okabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14989675A priority Critical patent/JPS5942470B2/ja
Publication of JPS5273673A publication Critical patent/JPS5273673A/en
Publication of JPS5942470B2 publication Critical patent/JPS5942470B2/ja
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To prevent the deterioration in optical and electrical characteristics induced by the heat treatment of a group III-V semiconductor substrate.
COPYRIGHT: (C)1977,JPO&Japio
JP14989675A 1975-12-15 1975-12-15 Expired JPS5942470B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14989675A JPS5942470B2 (en) 1975-12-15 1975-12-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14989675A JPS5942470B2 (en) 1975-12-15 1975-12-15

Publications (2)

Publication Number Publication Date
JPS5273673A true JPS5273673A (en) 1977-06-20
JPS5942470B2 JPS5942470B2 (en) 1984-10-15

Family

ID=15484976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14989675A Expired JPS5942470B2 (en) 1975-12-15 1975-12-15

Country Status (1)

Country Link
JP (1) JPS5942470B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4472206A (en) * 1982-11-10 1984-09-18 International Business Machines Corporation Method of activating implanted impurities in broad area compound semiconductors by short time contact annealing
US5047370A (en) * 1988-10-31 1991-09-10 Nippon Mining Co., Ltd. Method for producing compound semiconductor single crystal substrates

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4472206A (en) * 1982-11-10 1984-09-18 International Business Machines Corporation Method of activating implanted impurities in broad area compound semiconductors by short time contact annealing
US5047370A (en) * 1988-10-31 1991-09-10 Nippon Mining Co., Ltd. Method for producing compound semiconductor single crystal substrates

Also Published As

Publication number Publication date
JPS5942470B2 (en) 1984-10-15

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