JPS5367381A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5367381A
JPS5367381A JP14273076A JP14273076A JPS5367381A JP S5367381 A JPS5367381 A JP S5367381A JP 14273076 A JP14273076 A JP 14273076A JP 14273076 A JP14273076 A JP 14273076A JP S5367381 A JPS5367381 A JP S5367381A
Authority
JP
Japan
Prior art keywords
semiconductor device
extracting
drain electrode
providing
contact hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14273076A
Other languages
Japanese (ja)
Inventor
Kazuhiro Shimotori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14273076A priority Critical patent/JPS5367381A/en
Publication of JPS5367381A publication Critical patent/JPS5367381A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors

Abstract

PURPOSE: To make the high integration and high-speed operation possible by providing a contact hole to the bottom surface of a notch part and by extracting a drain electrode.
COPYRIGHT: (C)1978,JPO&Japio
JP14273076A 1976-11-27 1976-11-27 Semiconductor device Pending JPS5367381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14273076A JPS5367381A (en) 1976-11-27 1976-11-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14273076A JPS5367381A (en) 1976-11-27 1976-11-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5367381A true JPS5367381A (en) 1978-06-15

Family

ID=15322237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14273076A Pending JPS5367381A (en) 1976-11-27 1976-11-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5367381A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5518100A (en) * 1978-07-24 1980-02-07 Philips Nv Insulated gate field effect transistor
JPS55133573A (en) * 1979-04-05 1980-10-17 Nec Corp Insulated gate field effect transistor
WO2004017417A1 (en) 2002-07-15 2004-02-26 Infineon Technologies Ag Field effect transistor, associated use, and associated production method

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5518100A (en) * 1978-07-24 1980-02-07 Philips Nv Insulated gate field effect transistor
JPS55133573A (en) * 1979-04-05 1980-10-17 Nec Corp Insulated gate field effect transistor
WO2004017417A1 (en) 2002-07-15 2004-02-26 Infineon Technologies Ag Field effect transistor, associated use, and associated production method
EP1522103A1 (en) * 2002-07-15 2005-04-13 Infineon Technologies AG Field effect transistor, associated use, and associated production method
US7989294B2 (en) 2002-07-15 2011-08-02 Infineon Technologies Ag Vertical field-effect transistor

Similar Documents

Publication Publication Date Title
JPS52140280A (en) Semiconductor device
JPS528785A (en) Semiconductor device electrode structure
JPS5244186A (en) Semiconductor intergrated circuit device
JPS5367381A (en) Semiconductor device
JPS5367382A (en) Semiconductor device
JPS5379378A (en) Semoconductor davice and its production
JPS52153383A (en) Preparation of semiconductor device
JPS538072A (en) Semiconductor device
JPS52130567A (en) Preparation of semiconductor device
JPS5228868A (en) Semiconductor device
JPS5368070A (en) Etching method
JPS5422171A (en) Manufacture of semiconductor device
JPS5362471A (en) Semiconductor device
JPS533071A (en) Semiconductor device
JPS51131277A (en) Semi-conductor unit manufacturing process
JPS5323579A (en) Production of semiconductor device
JPS539488A (en) Production of semiconductor device
JPS5287373A (en) Production of semiconductor device
JPS51112266A (en) Semiconductor device production method
JPS53145485A (en) Production of semiconductor device having serrations on semiconductor surface
JPS5367389A (en) Production of semiconductor laser
JPS52126167A (en) Formation of electrode for semiconductor device
JPS5210676A (en) Semiconductor device
JPS5321582A (en) Mos type semiconductor device
JPS52154351A (en) Formation of electrode contact holes in semiconductor devices