JPS539488A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS539488A
JPS539488A JP8347676A JP8347676A JPS539488A JP S539488 A JPS539488 A JP S539488A JP 8347676 A JP8347676 A JP 8347676A JP 8347676 A JP8347676 A JP 8347676A JP S539488 A JPS539488 A JP S539488A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
forming
type layer
cnannel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8347676A
Other languages
Japanese (ja)
Other versions
JPS617750B2 (en
Inventor
Shinji Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8347676A priority Critical patent/JPS539488A/en
Publication of JPS539488A publication Critical patent/JPS539488A/en
Publication of JPS617750B2 publication Critical patent/JPS617750B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the number of production manpowers and achieve the increase in the scale of integration by forming a P type layer on the surface of an N type layer in the region for forming a P cnannel FET and forming source, drain electrodes of Sl directly on this surface.
COPYRIGHT: (C)1978,JPO&Japio
JP8347676A 1976-07-15 1976-07-15 Production of semiconductor device Granted JPS539488A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8347676A JPS539488A (en) 1976-07-15 1976-07-15 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8347676A JPS539488A (en) 1976-07-15 1976-07-15 Production of semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP60070925A Division JPS60242666A (en) 1985-04-05 1985-04-05 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS539488A true JPS539488A (en) 1978-01-27
JPS617750B2 JPS617750B2 (en) 1986-03-08

Family

ID=13803509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8347676A Granted JPS539488A (en) 1976-07-15 1976-07-15 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS539488A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54149469U (en) * 1978-04-05 1979-10-17
JPS58107663A (en) * 1981-12-11 1983-06-27 シ−メンス・アクチエンゲゼルシヤフト Method of producing dopant ion implantation tray zone formed in vicinity

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54149469U (en) * 1978-04-05 1979-10-17
JPS58107663A (en) * 1981-12-11 1983-06-27 シ−メンス・アクチエンゲゼルシヤフト Method of producing dopant ion implantation tray zone formed in vicinity
JPH0576190B2 (en) * 1981-12-11 1993-10-22 Siemens Ag

Also Published As

Publication number Publication date
JPS617750B2 (en) 1986-03-08

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