JPS539488A - Production of semiconductor device - Google Patents
Production of semiconductor deviceInfo
- Publication number
- JPS539488A JPS539488A JP8347676A JP8347676A JPS539488A JP S539488 A JPS539488 A JP S539488A JP 8347676 A JP8347676 A JP 8347676A JP 8347676 A JP8347676 A JP 8347676A JP S539488 A JPS539488 A JP S539488A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor device
- forming
- type layer
- cnannel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To reduce the number of production manpowers and achieve the increase in the scale of integration by forming a P type layer on the surface of an N type layer in the region for forming a P cnannel FET and forming source, drain electrodes of Sl directly on this surface.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8347676A JPS539488A (en) | 1976-07-15 | 1976-07-15 | Production of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8347676A JPS539488A (en) | 1976-07-15 | 1976-07-15 | Production of semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60070925A Division JPS60242666A (en) | 1985-04-05 | 1985-04-05 | Semiconductor device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS539488A true JPS539488A (en) | 1978-01-27 |
JPS617750B2 JPS617750B2 (en) | 1986-03-08 |
Family
ID=13803509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8347676A Granted JPS539488A (en) | 1976-07-15 | 1976-07-15 | Production of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS539488A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54149469U (en) * | 1978-04-05 | 1979-10-17 | ||
JPS58107663A (en) * | 1981-12-11 | 1983-06-27 | シ−メンス・アクチエンゲゼルシヤフト | Method of producing dopant ion implantation tray zone formed in vicinity |
-
1976
- 1976-07-15 JP JP8347676A patent/JPS539488A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54149469U (en) * | 1978-04-05 | 1979-10-17 | ||
JPS58107663A (en) * | 1981-12-11 | 1983-06-27 | シ−メンス・アクチエンゲゼルシヤフト | Method of producing dopant ion implantation tray zone formed in vicinity |
JPH0576190B2 (en) * | 1981-12-11 | 1993-10-22 | Siemens Ag |
Also Published As
Publication number | Publication date |
---|---|
JPS617750B2 (en) | 1986-03-08 |
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