JPS5384575A - Semicocductor device - Google Patents

Semicocductor device

Info

Publication number
JPS5384575A
JPS5384575A JP16046976A JP16046976A JPS5384575A JP S5384575 A JPS5384575 A JP S5384575A JP 16046976 A JP16046976 A JP 16046976A JP 16046976 A JP16046976 A JP 16046976A JP S5384575 A JPS5384575 A JP S5384575A
Authority
JP
Japan
Prior art keywords
semicocductor
npn3
developing
gate electrode
providing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16046976A
Other languages
Japanese (ja)
Inventor
Keizo Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP16046976A priority Critical patent/JPS5384575A/en
Publication of JPS5384575A publication Critical patent/JPS5384575A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain the short channel FET, by developing the NPN3 layer constituent on the insulating substrate and by providing the gate electrode at the P layer side surface via the insulating film.
COPYRIGHT: (C)1978,JPO&Japio
JP16046976A 1976-12-29 1976-12-29 Semicocductor device Pending JPS5384575A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16046976A JPS5384575A (en) 1976-12-29 1976-12-29 Semicocductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16046976A JPS5384575A (en) 1976-12-29 1976-12-29 Semicocductor device

Publications (1)

Publication Number Publication Date
JPS5384575A true JPS5384575A (en) 1978-07-26

Family

ID=15715611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16046976A Pending JPS5384575A (en) 1976-12-29 1976-12-29 Semicocductor device

Country Status (1)

Country Link
JP (1) JPS5384575A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57115868A (en) * 1981-01-09 1982-07-19 Semiconductor Energy Lab Co Ltd Insulated gate type semiconductor device and manufacture thereof
US5047812A (en) * 1989-02-27 1991-09-10 Motorola, Inc. Insulated gate field effect device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57115868A (en) * 1981-01-09 1982-07-19 Semiconductor Energy Lab Co Ltd Insulated gate type semiconductor device and manufacture thereof
US5047812A (en) * 1989-02-27 1991-09-10 Motorola, Inc. Insulated gate field effect device

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