JPS5384575A - Semicocductor device - Google Patents
Semicocductor deviceInfo
- Publication number
- JPS5384575A JPS5384575A JP16046976A JP16046976A JPS5384575A JP S5384575 A JPS5384575 A JP S5384575A JP 16046976 A JP16046976 A JP 16046976A JP 16046976 A JP16046976 A JP 16046976A JP S5384575 A JPS5384575 A JP S5384575A
- Authority
- JP
- Japan
- Prior art keywords
- semicocductor
- npn3
- developing
- gate electrode
- providing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To obtain the short channel FET, by developing the NPN3 layer constituent on the insulating substrate and by providing the gate electrode at the P layer side surface via the insulating film.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16046976A JPS5384575A (en) | 1976-12-29 | 1976-12-29 | Semicocductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16046976A JPS5384575A (en) | 1976-12-29 | 1976-12-29 | Semicocductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5384575A true JPS5384575A (en) | 1978-07-26 |
Family
ID=15715611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16046976A Pending JPS5384575A (en) | 1976-12-29 | 1976-12-29 | Semicocductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5384575A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57115868A (en) * | 1981-01-09 | 1982-07-19 | Semiconductor Energy Lab Co Ltd | Insulated gate type semiconductor device and manufacture thereof |
US5047812A (en) * | 1989-02-27 | 1991-09-10 | Motorola, Inc. | Insulated gate field effect device |
-
1976
- 1976-12-29 JP JP16046976A patent/JPS5384575A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57115868A (en) * | 1981-01-09 | 1982-07-19 | Semiconductor Energy Lab Co Ltd | Insulated gate type semiconductor device and manufacture thereof |
US5047812A (en) * | 1989-02-27 | 1991-09-10 | Motorola, Inc. | Insulated gate field effect device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5530855A (en) | Semiconductor optical device | |
JPS5384570A (en) | Field effect semiconductor device and its manufacture | |
JPS5384575A (en) | Semicocductor device | |
JPS52115663A (en) | Semiconductor device | |
JPS53112686A (en) | Manufacture for semiconductor device | |
JPS5366179A (en) | Semiconductor device | |
JPS534469A (en) | Semiconductor device | |
JPS52100877A (en) | Field effect transistor of junction type | |
JPS53135581A (en) | Manufacture for mos semiconductor device | |
JPS5286779A (en) | Semiconductor device | |
JPS535580A (en) | Field effect type semiconductor device | |
JPS5339088A (en) | Insulated gate type field effect semiconductor device | |
JPS5364480A (en) | Field effect semiconductor device | |
JPS53125779A (en) | Mos type semiconductor device | |
JPS52105782A (en) | Semiconductor device | |
JPS5423478A (en) | Semiconductor device of field effect type | |
JPS5370769A (en) | Production of semiconductor device | |
JPS5371573A (en) | Field effect transistor of isolating gate type | |
JPS52108775A (en) | Semiconductor device | |
JPS52127078A (en) | Semiconductor device | |
JPS52144980A (en) | Sos semiconductor device | |
JPS5380976A (en) | Semiconductor device | |
JPS5368180A (en) | Semiconductor device | |
JPS5339086A (en) | Semiconductor device | |
JPS532086A (en) | Field effect type semiconductor device |