JPS53125779A - Mos type semiconductor device - Google Patents
Mos type semiconductor deviceInfo
- Publication number
- JPS53125779A JPS53125779A JP4086077A JP4086077A JPS53125779A JP S53125779 A JPS53125779 A JP S53125779A JP 4086077 A JP4086077 A JP 4086077A JP 4086077 A JP4086077 A JP 4086077A JP S53125779 A JPS53125779 A JP S53125779A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- type semiconductor
- mos type
- ion implantation
- tilt surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To establish a FET extremely short channel, by laminating a mask having small ion implantation range on a conventional gate electrode, forming a tilt surface on the side surface, and providing an ion implantation layer specifying the threshold value and crossing a substrate and a gate oxide film under the tilt surface.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4086077A JPS53125779A (en) | 1977-04-08 | 1977-04-08 | Mos type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4086077A JPS53125779A (en) | 1977-04-08 | 1977-04-08 | Mos type semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53125779A true JPS53125779A (en) | 1978-11-02 |
JPS6128230B2 JPS6128230B2 (en) | 1986-06-28 |
Family
ID=12592288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4086077A Granted JPS53125779A (en) | 1977-04-08 | 1977-04-08 | Mos type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53125779A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4933730A (en) * | 1986-05-23 | 1990-06-12 | Fujitsu Limited | Semiconductor device having a high breakdown voltage characteristic |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01132970U (en) * | 1988-02-29 | 1989-09-11 |
-
1977
- 1977-04-08 JP JP4086077A patent/JPS53125779A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4933730A (en) * | 1986-05-23 | 1990-06-12 | Fujitsu Limited | Semiconductor device having a high breakdown voltage characteristic |
Also Published As
Publication number | Publication date |
---|---|
JPS6128230B2 (en) | 1986-06-28 |
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