JPS5382277A - Schottky gate field effect transistor - Google Patents

Schottky gate field effect transistor

Info

Publication number
JPS5382277A
JPS5382277A JP15735976A JP15735976A JPS5382277A JP S5382277 A JPS5382277 A JP S5382277A JP 15735976 A JP15735976 A JP 15735976A JP 15735976 A JP15735976 A JP 15735976A JP S5382277 A JPS5382277 A JP S5382277A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
gate field
schottky gate
current path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15735976A
Other languages
Japanese (ja)
Inventor
Yoshinori Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15735976A priority Critical patent/JPS5382277A/en
Publication of JPS5382277A publication Critical patent/JPS5382277A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To make the current-voltage characteristics between source and drain to ideal characteristics by providing space which does not become a current path near the interface between a semiconductor substrate and an operating layer and so constructing the transistor that spreading of current path does not occur.
COPYRIGHT: (C)1978,JPO&Japio
JP15735976A 1976-12-28 1976-12-28 Schottky gate field effect transistor Pending JPS5382277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15735976A JPS5382277A (en) 1976-12-28 1976-12-28 Schottky gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15735976A JPS5382277A (en) 1976-12-28 1976-12-28 Schottky gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS5382277A true JPS5382277A (en) 1978-07-20

Family

ID=15647934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15735976A Pending JPS5382277A (en) 1976-12-28 1976-12-28 Schottky gate field effect transistor

Country Status (1)

Country Link
JP (1) JPS5382277A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5629964U (en) * 1979-08-10 1981-03-23
JPS5689269U (en) * 1979-12-12 1981-07-16
JPS56140668A (en) * 1980-03-27 1981-11-04 Ibm Method of manufacturing semiconductor device
JPS57145377A (en) * 1981-03-03 1982-09-08 Nec Corp Manufacture of schottky barrier type field effect transistor
JPS60157262A (en) * 1984-01-26 1985-08-17 Mitsubishi Electric Corp Semiconductor ic

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5629964U (en) * 1979-08-10 1981-03-23
JPS5689269U (en) * 1979-12-12 1981-07-16
JPS56140668A (en) * 1980-03-27 1981-11-04 Ibm Method of manufacturing semiconductor device
JPH0434301B2 (en) * 1980-03-27 1992-06-05 Intaanashonaru Bijinesu Mashiinzu Corp
JPS57145377A (en) * 1981-03-03 1982-09-08 Nec Corp Manufacture of schottky barrier type field effect transistor
JPS60157262A (en) * 1984-01-26 1985-08-17 Mitsubishi Electric Corp Semiconductor ic

Similar Documents

Publication Publication Date Title
JPS52102690A (en) Semiconductor capacitance device
JPS535581A (en) Schottky gate type field effect transistor
JPS538572A (en) Field effect type transistor
JPS5382277A (en) Schottky gate field effect transistor
JPS52117586A (en) Semiconductor device
JPS546777A (en) Field effect type transistor
JPS52100979A (en) Production and drive of dual gate schottky barrier gate type fieled ef fect transistor
JPS5381087A (en) Gallium aresenide field effect transistor
JPS5322379A (en) Junction type field eff ect transistor
JPS5491074A (en) Semiconductor device
JPS5346288A (en) Mis type semiconductor device
JPS52108777A (en) Field-effect transistor for schottky barrier layer
JPS5415674A (en) Semiconductor device containing schottky barrier
JPS5543864A (en) Mis semiconductor device
JPS5366179A (en) Semiconductor device
JPS52100877A (en) Field effect transistor of junction type
JPS5381086A (en) Gallium aresenide field effect transistor
JPS52128078A (en) Manufacture of field effect transistor
JPS52146186A (en) Semiconductor device
JPS5286086A (en) Field effect transistor
JPS5381089A (en) Gallirm arsenide field effect transistor
JPS5297683A (en) Semiconductor circuit device
JPS5358780A (en) Field effect type transistor
JPS5286088A (en) Manufacture of semiconductor device
JPS5373980A (en) Semiconductor device and its manufacture