JPS5543864A - Mis semiconductor device - Google Patents

Mis semiconductor device

Info

Publication number
JPS5543864A
JPS5543864A JP11655278A JP11655278A JPS5543864A JP S5543864 A JPS5543864 A JP S5543864A JP 11655278 A JP11655278 A JP 11655278A JP 11655278 A JP11655278 A JP 11655278A JP S5543864 A JPS5543864 A JP S5543864A
Authority
JP
Japan
Prior art keywords
area
diode
source
gate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11655278A
Other languages
Japanese (ja)
Inventor
Hideshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11655278A priority Critical patent/JPS5543864A/en
Publication of JPS5543864A publication Critical patent/JPS5543864A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

PURPOSE: To obtain a junction diode isolated from drain by providing a semiconductor well area which is of the same conductive type as a channel area of FET element on a part of the surface of a semiconductor substrate and forming a semiconductor area which is of a counter conductive type thereto on its surface.
CONSTITUTION: A circuit is connected between source and gate which connects the first junction diode D1 formed between P-type well area 3 and n+-type semiconductor area 6 back to back with the second junction diode D2 formed between P-type well area 3 and n+-type semiconductor area 7, and the third juction diode D3 is connected between gate and source. From applying abnormal voltage between gate and source, the diode D1 or D2 which is counter to the abnormal voltage breaks down to prevent a failure of the gate insulating film. Where abnormal voltage works between drain and source, the diode D3 breaks down to prevent a failure of the drain.
COPYRIGHT: (C)1980,JPO&Japio
JP11655278A 1978-09-25 1978-09-25 Mis semiconductor device Pending JPS5543864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11655278A JPS5543864A (en) 1978-09-25 1978-09-25 Mis semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11655278A JPS5543864A (en) 1978-09-25 1978-09-25 Mis semiconductor device

Publications (1)

Publication Number Publication Date
JPS5543864A true JPS5543864A (en) 1980-03-27

Family

ID=14689930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11655278A Pending JPS5543864A (en) 1978-09-25 1978-09-25 Mis semiconductor device

Country Status (1)

Country Link
JP (1) JPS5543864A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010781A (en) * 1983-06-30 1985-01-19 Toshiba Corp Semiconductor device
JPH01157573A (en) * 1987-09-28 1989-06-20 Mitsubishi Electric Corp Semiconductor device and its manufacture
JPH0230187A (en) * 1988-07-20 1990-01-31 Fuji Electric Co Ltd Semiconductor integrated circuit
US5477065A (en) * 1990-07-02 1995-12-19 Kabushiki Kaisha Toshiba Lateral thin film thyristor with bevel
JP2015115608A (en) * 2013-12-09 2015-06-22 インターナショナル・レクティファイアー・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｒｅｃｔｉｆｉｅｒ Ｃｏｒｐｏｒａｔｉｏｎ Normally-off composite power device and monolithic integrated normally-off composite power device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50116182A (en) * 1974-02-11 1975-09-11
JPS54142074A (en) * 1978-04-27 1979-11-05 Pioneer Electronic Corp Method of fabricating gate protecting semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50116182A (en) * 1974-02-11 1975-09-11
JPS54142074A (en) * 1978-04-27 1979-11-05 Pioneer Electronic Corp Method of fabricating gate protecting semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6010781A (en) * 1983-06-30 1985-01-19 Toshiba Corp Semiconductor device
JPH01157573A (en) * 1987-09-28 1989-06-20 Mitsubishi Electric Corp Semiconductor device and its manufacture
JPH0230187A (en) * 1988-07-20 1990-01-31 Fuji Electric Co Ltd Semiconductor integrated circuit
US5477065A (en) * 1990-07-02 1995-12-19 Kabushiki Kaisha Toshiba Lateral thin film thyristor with bevel
JP2015115608A (en) * 2013-12-09 2015-06-22 インターナショナル・レクティファイアー・コーポレーションＩｎｔｅｒｎａｔｉｏｎａｌ Ｒｅｃｔｉｆｉｅｒ Ｃｏｒｐｏｒａｔｉｏｎ Normally-off composite power device and monolithic integrated normally-off composite power device

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