JPS6489457A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6489457A
JPS6489457A JP62244320A JP24432087A JPS6489457A JP S6489457 A JPS6489457 A JP S6489457A JP 62244320 A JP62244320 A JP 62244320A JP 24432087 A JP24432087 A JP 24432087A JP S6489457 A JPS6489457 A JP S6489457A
Authority
JP
Japan
Prior art keywords
oxide film
gate
substrate
forming
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62244320A
Other languages
Japanese (ja)
Other versions
JP2602848B2 (en
Inventor
Kazuhiko Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62244320A priority Critical patent/JP2602848B2/en
Publication of JPS6489457A publication Critical patent/JPS6489457A/en
Application granted granted Critical
Publication of JP2602848B2 publication Critical patent/JP2602848B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To manufacture a semiconductor device having two or more kinds of gate oxide films or electrode materials at high reliability and at a high yield rate, by forming a first gate oxide film on the surface of a substrate, forming a first gate electrode, removing a part of the gate oxide film, forming a second gate oxide film on the substrate, and thereafter forming a second gate electrode. CONSTITUTION:An element isolating oxide film 12 is selectively formed on the surface of a P-type silicon substrate. Thereafter, a first gate oxide film 13 is formed on the surface of the substrate by a thermal oxidation method. Then, a first gate electrode 14 is selectively formed on the oxide film 13 on a part of an element forming region. Then, the oxide film 13 on the element forming region, on which the electrode 14 is not formed, is removed. A second gate insulating film 15 is formed on the entire surface of the substrate by thermal oxidation method. Then, a second gate electrode 16 is selectively formed on the oxide film in the region, where the oxide film 15 is formed. Since the gate oxide film 13 is covered and protected with the gate electrode 14, the reliability and the yield rate of a MOS transistor are improved.
JP62244320A 1987-09-30 1987-09-30 Method for manufacturing semiconductor device Expired - Fee Related JP2602848B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62244320A JP2602848B2 (en) 1987-09-30 1987-09-30 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62244320A JP2602848B2 (en) 1987-09-30 1987-09-30 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6489457A true JPS6489457A (en) 1989-04-03
JP2602848B2 JP2602848B2 (en) 1997-04-23

Family

ID=17116967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62244320A Expired - Fee Related JP2602848B2 (en) 1987-09-30 1987-09-30 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JP2602848B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03184368A (en) * 1989-12-13 1991-08-12 Toshiba Corp Manufacture of semiconductor device
US6114203A (en) * 1995-05-10 2000-09-05 Stmicroelectronics S.R.L. Method of manufacturing a MOS integrated circuit having components with different dielectrics
JP2002313941A (en) * 2001-04-12 2002-10-25 Oki Electric Ind Co Ltd Method of manufacturing semiconductor device
DE10223226B4 (en) * 2001-06-01 2007-09-27 Nissan Motor Co., Ltd., Yokohama Dual clutch transmission with transmission impact noise damping system and method for its control

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5458386A (en) * 1977-10-19 1979-05-11 Hitachi Ltd Mos semiconductor device
JPS6045053A (en) * 1983-08-22 1985-03-11 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5458386A (en) * 1977-10-19 1979-05-11 Hitachi Ltd Mos semiconductor device
JPS6045053A (en) * 1983-08-22 1985-03-11 Mitsubishi Electric Corp Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03184368A (en) * 1989-12-13 1991-08-12 Toshiba Corp Manufacture of semiconductor device
US6114203A (en) * 1995-05-10 2000-09-05 Stmicroelectronics S.R.L. Method of manufacturing a MOS integrated circuit having components with different dielectrics
JP2002313941A (en) * 2001-04-12 2002-10-25 Oki Electric Ind Co Ltd Method of manufacturing semiconductor device
DE10223226B4 (en) * 2001-06-01 2007-09-27 Nissan Motor Co., Ltd., Yokohama Dual clutch transmission with transmission impact noise damping system and method for its control
DE10223226B8 (en) * 2001-06-01 2008-02-07 Nissan Motor Co., Ltd., Yokohama Dual clutch transmission with transmission impact noise damping system and method for its control

Also Published As

Publication number Publication date
JP2602848B2 (en) 1997-04-23

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees