JPS6465875A - Thin film transistor and manufacture thereof - Google Patents
Thin film transistor and manufacture thereofInfo
- Publication number
- JPS6465875A JPS6465875A JP22262087A JP22262087A JPS6465875A JP S6465875 A JPS6465875 A JP S6465875A JP 22262087 A JP22262087 A JP 22262087A JP 22262087 A JP22262087 A JP 22262087A JP S6465875 A JPS6465875 A JP S6465875A
- Authority
- JP
- Japan
- Prior art keywords
- source
- film
- drain
- region
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 6
- 239000000463 material Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
PURPOSE:To ensure an on-current and make a leakage current between a source and a drain small simultaneously while a transistor is in an off-state by a method wherein each of region junctions is made to be thinner. CONSTITUTION:An island 2 of polycrystalline silicon film is formed on an insulating substrate 1, and an insulating film 3 and a gate electrode 4 of polycrystalline silicon film are formed to be laminated. Next, the film 3 is subjected to etching through the electrode 4 used as a mask, impurity is diffused for the formation of a source region and a drain region, and mask materials 9 and 9' both of silicon oxide film are formed through a CVD method or the like. Then, when a heat treatment is performed, the film 2 under the electrode 4 which is not covered with the mask material 9' is much oxidized, and on the other hand, the source and the drain section are little oxidized, so that a junction of the source and the drain region with an active region is made to be thinner so as to ensure an on-current and a thin film transistor, in which a leakage current between a source and a drain is small.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22262087A JP2568854B2 (en) | 1987-09-04 | 1987-09-04 | Thin film transistor and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22262087A JP2568854B2 (en) | 1987-09-04 | 1987-09-04 | Thin film transistor and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6465875A true JPS6465875A (en) | 1989-03-13 |
| JP2568854B2 JP2568854B2 (en) | 1997-01-08 |
Family
ID=16785306
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22262087A Expired - Lifetime JP2568854B2 (en) | 1987-09-04 | 1987-09-04 | Thin film transistor and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2568854B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5747828A (en) * | 1995-03-30 | 1998-05-05 | Sharp Kabushiki Kaisha | Semiconductor device with increased distance between channel edges and a gate electrode |
| US6465284B2 (en) | 1993-07-27 | 2002-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
-
1987
- 1987-09-04 JP JP22262087A patent/JP2568854B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6465284B2 (en) | 1993-07-27 | 2002-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US5747828A (en) * | 1995-03-30 | 1998-05-05 | Sharp Kabushiki Kaisha | Semiconductor device with increased distance between channel edges and a gate electrode |
| US6010922A (en) * | 1995-03-30 | 2000-01-04 | Sharp Kabushiki Kaisha | Semiconductor device with increased distance between channel edges and a gate electrode |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2568854B2 (en) | 1997-01-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |