JPS57194583A - Mos semiconductor device and manufacture thereof - Google Patents

Mos semiconductor device and manufacture thereof

Info

Publication number
JPS57194583A
JPS57194583A JP56079221A JP7922181A JPS57194583A JP S57194583 A JPS57194583 A JP S57194583A JP 56079221 A JP56079221 A JP 56079221A JP 7922181 A JP7922181 A JP 7922181A JP S57194583 A JPS57194583 A JP S57194583A
Authority
JP
Japan
Prior art keywords
type
layer
utilizing
ion
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56079221A
Other languages
Japanese (ja)
Inventor
Kazutoshi Ashikawa
Mitsuo Ito
Manabu Matsuzawa
Hideaki Kato
Isao Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56079221A priority Critical patent/JPS57194583A/en
Publication of JPS57194583A publication Critical patent/JPS57194583A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To improve the withstand voltage by a method wherein the triple diffusion type utilizing the crystal with the thick N layer or provided with the layer containing phosphur at high temperature as a part of the N type substrate is adopted. CONSTITUTION:The N<+> layers 10, 10' are formed on the both main surfaces of the N type substrate 9 comprising the Si crystal doped with Sb and the like by means of diffusing the P impurities and the overall surface of the N<+> type layer 10 on one side is etched and mirror ground to expose the N type substrate 9 forming into the specified thickness. Next the thermo oxide film 11 is formed on the surfade of the substrate 9 and a part of said film 11 is removed to implant B ion utilizing the part removed as a mask to form the P type region 12. Firstly the gate oxide film 13 is formed and the gate electrode 14 of the multicrystal Si layer is further formed on said film 13. Secondly B is ion-implanted utilizing the gate electrode 14 as a mask to form the channel region 15 and then P is further ion-implanted to form the N<+> type region 16.
JP56079221A 1981-05-27 1981-05-27 Mos semiconductor device and manufacture thereof Pending JPS57194583A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56079221A JPS57194583A (en) 1981-05-27 1981-05-27 Mos semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56079221A JPS57194583A (en) 1981-05-27 1981-05-27 Mos semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57194583A true JPS57194583A (en) 1982-11-30

Family

ID=13683855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56079221A Pending JPS57194583A (en) 1981-05-27 1981-05-27 Mos semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57194583A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01253279A (en) * 1988-04-01 1989-10-09 Fuji Electric Co Ltd Manufacture of vertical type conductivity-modulation mosfet substrate
JPH03152975A (en) * 1989-11-09 1991-06-28 Mitsubishi Electric Corp Manufacture of semiconductor substrate
WO2002061845A1 (en) * 2001-02-01 2002-08-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
CN100416858C (en) * 2001-02-01 2008-09-03 三菱电机株式会社 Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5454567A (en) * 1977-10-07 1979-04-28 Sanyo Electric Co Ltd Production of semiconductor device
JPS5660023A (en) * 1979-10-20 1981-05-23 Nec Home Electronics Ltd Manufacture of semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5454567A (en) * 1977-10-07 1979-04-28 Sanyo Electric Co Ltd Production of semiconductor device
JPS5660023A (en) * 1979-10-20 1981-05-23 Nec Home Electronics Ltd Manufacture of semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01253279A (en) * 1988-04-01 1989-10-09 Fuji Electric Co Ltd Manufacture of vertical type conductivity-modulation mosfet substrate
JPH03152975A (en) * 1989-11-09 1991-06-28 Mitsubishi Electric Corp Manufacture of semiconductor substrate
WO2002061845A1 (en) * 2001-02-01 2002-08-08 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
JPWO2002061845A1 (en) * 2001-02-01 2004-06-03 三菱電機株式会社 Semiconductor device and manufacturing method thereof
US6815767B2 (en) 2001-02-01 2004-11-09 Mitsubishi Denki Kabushiki Kaisha Insulated gate transistor
US7250345B2 (en) 2001-02-01 2007-07-31 Mitsubishi Denki Kabushiki Kaisha Insulated gate transistor
CN100416858C (en) * 2001-02-01 2008-09-03 三菱电机株式会社 Semiconductor device
US7560771B2 (en) 2001-02-01 2009-07-14 Mitsubishi Denki Kabushiki Kaisha Insulated gate transistor
JP5025071B2 (en) * 2001-02-01 2012-09-12 三菱電機株式会社 Semiconductor device and manufacturing method thereof

Similar Documents

Publication Publication Date Title
JPS57194583A (en) Mos semiconductor device and manufacture thereof
JPS54142981A (en) Manufacture of insulation gate type semiconductor device
JPS57149774A (en) Semiconductor device
JPS57197848A (en) Semiconductor device and manufacture thereof
JPS5687359A (en) Manufacture of one transistor type memory cell
JPS55157241A (en) Manufacture of semiconductor device
JPS55107229A (en) Method of manufacturing semiconductor device
JPS5513953A (en) Complementary integrated circuit
JPS5645066A (en) Semiconductor device and manufacture therefor
JPS57132357A (en) Manufacture of semiconductor element
JPS5771170A (en) Manufacture of complementary mos semiconductor device
JPS55162270A (en) Semiconductor device
JPS5664467A (en) Mos type semiconductor device
JPS6412575A (en) Manufacture of mos semiconductor device
JPS5621361A (en) Manufacture of dynamic memory cell
JPS57192073A (en) Semiconductor device
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS5650577A (en) Manufacture of semiconductor device
JPS6465875A (en) Thin film transistor and manufacture thereof
JPS57145372A (en) Manufacture of semiconductor device
JPS5612777A (en) Vertical type field effect semiconductor device and manufacture therefor
JPS6465874A (en) Manufacture of semiconductor device
JPS57192078A (en) Manufacture of mos semiconductor device
JPS55123171A (en) Manufacture of semiconductor device
JPS5649553A (en) Manufacture of semiconductor memory