JPS5771170A - Manufacture of complementary mos semiconductor device - Google Patents
Manufacture of complementary mos semiconductor deviceInfo
- Publication number
- JPS5771170A JPS5771170A JP55147928A JP14792880A JPS5771170A JP S5771170 A JPS5771170 A JP S5771170A JP 55147928 A JP55147928 A JP 55147928A JP 14792880 A JP14792880 A JP 14792880A JP S5771170 A JPS5771170 A JP S5771170A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- polycrystalline
- electrode
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000295 complement effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000013078 crystal Substances 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To obtain a high-reliabilty C-MOS device by a method wherein two single crystal layer is epitaxially grown by inserting a polycrystalline Si layer on a crystalline insulating substrate and boron ion and arsenic ion having low diffusion coefficient are implanted in one single crystal layer and the other single crystal layer respectively to form transistors having p and n channels respectively. CONSTITUTION:An SiO2 film 31 working as a border section ina C-MOS device is formed on a sapphire substrate 30 and a p type layer 32 is epitaxially grown on the whole surface including the SiO2 film 31 and a polycrystalline Si film 33 is grown on the film 31. Next, thick field oxide films 34 are formed at the end sections of the layers 32 isolated by the layer 33 to form insular layers 32 respectively and polycrystalline Si gate electrodes 36, 36' including impuries are formed on each layer 32 through gate insulating films 35, 35'. Then, the electrode 36 is covered with a resist film 37 and deep p<+> type source and drain regions, 38' and 39' are formed at the opposite sides of the electrode 36' by B ion implantation and then the fim 37 is renewed to 40 and shallow n<+> type source and drain regions 38 and 39 are formed at the opposite sides of the electrode 36 by using As ion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55147928A JPS5771170A (en) | 1980-10-22 | 1980-10-22 | Manufacture of complementary mos semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55147928A JPS5771170A (en) | 1980-10-22 | 1980-10-22 | Manufacture of complementary mos semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5771170A true JPS5771170A (en) | 1982-05-01 |
Family
ID=15441241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55147928A Pending JPS5771170A (en) | 1980-10-22 | 1980-10-22 | Manufacture of complementary mos semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5771170A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60186053A (en) * | 1984-03-06 | 1985-09-21 | Seiko Epson Corp | Thin film complementary mos circuit |
| JPH07273348A (en) * | 1994-09-27 | 1995-10-20 | Seiko Epson Corp | Complementary thin film transistor circuit |
-
1980
- 1980-10-22 JP JP55147928A patent/JPS5771170A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60186053A (en) * | 1984-03-06 | 1985-09-21 | Seiko Epson Corp | Thin film complementary mos circuit |
| JPH0586674B2 (en) * | 1984-03-06 | 1993-12-13 | Seiko Epson Corp | |
| JPH07273348A (en) * | 1994-09-27 | 1995-10-20 | Seiko Epson Corp | Complementary thin film transistor circuit |
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