JPS5771168A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5771168A
JPS5771168A JP55146959A JP14695980A JPS5771168A JP S5771168 A JPS5771168 A JP S5771168A JP 55146959 A JP55146959 A JP 55146959A JP 14695980 A JP14695980 A JP 14695980A JP S5771168 A JPS5771168 A JP S5771168A
Authority
JP
Japan
Prior art keywords
regions
region
type
deep
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55146959A
Other languages
Japanese (ja)
Inventor
Toshinori Hirashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55146959A priority Critical patent/JPS5771168A/en
Publication of JPS5771168A publication Critical patent/JPS5771168A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0244—I2L structures integrated in combination with analog structures

Abstract

PURPOSE:To obtain a device permitting a variety of circuit operation by a method wherein a semiconductor layer is split into three regions and same conductivity type regions with deep high impurity concentration are provided in the first and the second regions and an I<2>L element is formed in the first region and bipolar transistors are formed in the second region and the third region having no deep region respectively. CONSTITUTION:Three N<+> type buried regions 2 are diffused are formed on a P type semiconductor substrate 1 to epitaxially grow N<-> type layers 3 on the whole surface including the regions 2 and the whole surface is covered with SiO2 films 16 to provide corresponding openings 27-29 between the respective region 2 and P type impurities 30 are adhered to the opening 27-29. Next, big openings 31 and 32 are perforated through the film 16, corresponding to the regions 2 located at the oposite sides, and N type impurity ion implantation layers 33 are formed in the openings 31 and 32 to generate P type isolation regions 4 reaching the substrate 1 between each region 2 and deep N type well regions 5 and 9 reaching the regions 2 on the opposite side regions 2 are made by thermal treatment. In this way, the epitaxial layer 3 is split into three and an I<2>L element is formed in a region 5 and bipolar transistors are formed in the layers 3 located at the region 9 and between the regions 9 and 5 respectively.
JP55146959A 1980-10-22 1980-10-22 Semiconductor integrated circuit device Pending JPS5771168A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55146959A JPS5771168A (en) 1980-10-22 1980-10-22 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55146959A JPS5771168A (en) 1980-10-22 1980-10-22 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5771168A true JPS5771168A (en) 1982-05-01

Family

ID=15419444

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55146959A Pending JPS5771168A (en) 1980-10-22 1980-10-22 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5771168A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990008421A1 (en) * 1989-01-17 1990-07-26 Motorola, Inc. Vibrator

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990008421A1 (en) * 1989-01-17 1990-07-26 Motorola, Inc. Vibrator

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