JPS56147467A - Cmos semiconductor device and manufacture thereof - Google Patents

Cmos semiconductor device and manufacture thereof

Info

Publication number
JPS56147467A
JPS56147467A JP5042880A JP5042880A JPS56147467A JP S56147467 A JPS56147467 A JP S56147467A JP 5042880 A JP5042880 A JP 5042880A JP 5042880 A JP5042880 A JP 5042880A JP S56147467 A JPS56147467 A JP S56147467A
Authority
JP
Japan
Prior art keywords
layer
diffused
substrate
fets
drains
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5042880A
Other languages
Japanese (ja)
Inventor
Yutaka Hatano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5042880A priority Critical patent/JPS56147467A/en
Publication of JPS56147467A publication Critical patent/JPS56147467A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Abstract

PURPOSE:To eliminate the leakage current between the first and second FETs in a CMOS device and speed up the same by making electrodes contactint with each other reach an insulating substrate solely through the contact portion and vicinity. CONSTITUTION:On a saphhire substrate 61, an epitaxial layer in grown, and a P layer 66 and an N layer 67 are provided. As is diffused in the P layer 66 to form N<+> type source and drain 62 and 63, while B is diffused in the N layer 67 to form P<+> type source and drain 65 and 64. Then, this is coated with an Al thin film 68, which is opened at the boundary between the drains in order to form a proton- implanted layer 69. The Al film 68 is removed, and a heat treatment is applied. Consequently, the proton-implanted portion is enhansively diffused to reach the substrate 61. Then, a gate insulating film and various electrodes are provided as usual. By said constitution, the sources and drains can be formed shallowly, and the transverse diffusion can be decreased. Accordingly, the capacitance resulting from the overlap with the gate can be decreased, and the element can be speed up. In addition, the sources of both FETs will not be forward-biased, so that the leakage current can be restrained.
JP5042880A 1980-04-18 1980-04-18 Cmos semiconductor device and manufacture thereof Pending JPS56147467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5042880A JPS56147467A (en) 1980-04-18 1980-04-18 Cmos semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5042880A JPS56147467A (en) 1980-04-18 1980-04-18 Cmos semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS56147467A true JPS56147467A (en) 1981-11-16

Family

ID=12858589

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5042880A Pending JPS56147467A (en) 1980-04-18 1980-04-18 Cmos semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56147467A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6852580B2 (en) * 1999-11-19 2005-02-08 Matsushita Electric Industrial Co., Ltd. Method of fabricating semiconductor device
US6911926B2 (en) 1997-11-27 2005-06-28 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911926B2 (en) 1997-11-27 2005-06-28 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
US7184017B2 (en) 1997-11-27 2007-02-27 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
US7550790B2 (en) 1997-11-27 2009-06-23 Semiconductor Energy Laboratory Co., Ltd. D/A conversion circuit and semiconductor device
US6852580B2 (en) * 1999-11-19 2005-02-08 Matsushita Electric Industrial Co., Ltd. Method of fabricating semiconductor device

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