JPS5632757A - Insulated gate type transistor and integrated circuit - Google Patents

Insulated gate type transistor and integrated circuit

Info

Publication number
JPS5632757A
JPS5632757A JP10837779A JP10837779A JPS5632757A JP S5632757 A JPS5632757 A JP S5632757A JP 10837779 A JP10837779 A JP 10837779A JP 10837779 A JP10837779 A JP 10837779A JP S5632757 A JPS5632757 A JP S5632757A
Authority
JP
Japan
Prior art keywords
region
type
substrate
coated
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10837779A
Other languages
Japanese (ja)
Inventor
Junichi Nishizawa
Tadahiro Omi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP10837779A priority Critical patent/JPS5632757A/en
Priority to EP80302930A priority patent/EP0024905B1/en
Priority to DE8080302930T priority patent/DE3069973D1/en
Publication of JPS5632757A publication Critical patent/JPS5632757A/en
Priority to US07/062,333 priority patent/US5384476A/en
Priority to US08/134,010 priority patent/US5552623A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To remarkably decrease the leakage current of an IGFET at the time of breaking it even in a short channel structure by forming a reverse conductivity type high impurity density region to a source region in the vicinity of the source region in a substrate region under a gate insulating film forming the IGFET. CONSTITUTION:A P<+> type chabnel-breakdown region 18 is diffused in the periphery of a P type semiconductor substrate 11, a thick field oxide film 16 is coated thereon, and N<+> type source region 12 and drain region 13 are diffused in the substrate 11 surrounded by the film 16. Then, a gate electrode 14' made of P<+> type polycrystalline Si is formed through a gate insulating film 14 on the surface of a substrate 11 exposed between the regions 12 and 13, and a PSG film 17 is coated on the entire surface. Thereafter, openings are perforated at the film 17, an aluminum electrode 12' is coated on the region 12, and an N<+> type polycrystalline Si electrode 13'' is coated on the region 13, and a further thinner oxide film 31 is formed on the electrode 13'' with an aluminum electrode 32 formed thereon. In this configuration a P<+> type region 33 is newly additionally formed in the vicinity of the region 13 in the substrate 11.
JP10837779A 1979-08-25 1979-08-25 Insulated gate type transistor and integrated circuit Pending JPS5632757A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP10837779A JPS5632757A (en) 1979-08-25 1979-08-25 Insulated gate type transistor and integrated circuit
EP80302930A EP0024905B1 (en) 1979-08-25 1980-08-22 Insulated-gate field-effect transistor
DE8080302930T DE3069973D1 (en) 1979-08-25 1980-08-22 Insulated-gate field-effect transistor
US07/062,333 US5384476A (en) 1979-08-25 1987-06-09 Short channel MOSFET with buried anti-punch through region
US08/134,010 US5552623A (en) 1979-08-25 1993-10-12 Short channel mosfet with buried anti-punch through region

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10837779A JPS5632757A (en) 1979-08-25 1979-08-25 Insulated gate type transistor and integrated circuit

Publications (1)

Publication Number Publication Date
JPS5632757A true JPS5632757A (en) 1981-04-02

Family

ID=14483220

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10837779A Pending JPS5632757A (en) 1979-08-25 1979-08-25 Insulated gate type transistor and integrated circuit

Country Status (1)

Country Link
JP (1) JPS5632757A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4644386A (en) * 1982-06-29 1987-02-17 Handotai Kenkyu Shinkokai Integrated circuit employing insulated gate electrostatic induction transistor
US4646118A (en) * 1983-12-13 1987-02-24 Fujitsu Limited Semiconductor memory device
US4660062A (en) * 1982-09-16 1987-04-21 Handotai Kenkyu Shinkokai Insulated gate transistor having reduced channel length
US4966859A (en) * 1982-03-09 1990-10-30 Siemens Aktiengesellschaft Voltage-stable sub-μm MOS transistor for VLSI circuits
JPH03293767A (en) * 1990-10-19 1991-12-25 Semiconductor Res Found Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4966859A (en) * 1982-03-09 1990-10-30 Siemens Aktiengesellschaft Voltage-stable sub-μm MOS transistor for VLSI circuits
US4644386A (en) * 1982-06-29 1987-02-17 Handotai Kenkyu Shinkokai Integrated circuit employing insulated gate electrostatic induction transistor
US4660062A (en) * 1982-09-16 1987-04-21 Handotai Kenkyu Shinkokai Insulated gate transistor having reduced channel length
US4646118A (en) * 1983-12-13 1987-02-24 Fujitsu Limited Semiconductor memory device
JPH03293767A (en) * 1990-10-19 1991-12-25 Semiconductor Res Found Semiconductor device

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