JPS57133677A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS57133677A
JPS57133677A JP2071381A JP2071381A JPS57133677A JP S57133677 A JPS57133677 A JP S57133677A JP 2071381 A JP2071381 A JP 2071381A JP 2071381 A JP2071381 A JP 2071381A JP S57133677 A JPS57133677 A JP S57133677A
Authority
JP
Japan
Prior art keywords
region
drain
diffusion layer
gate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2071381A
Other languages
Japanese (ja)
Inventor
Kiyoshi Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2071381A priority Critical patent/JPS57133677A/en
Publication of JPS57133677A publication Critical patent/JPS57133677A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To improve the dielectric resistance of an Si gate type MOSFET, and to make the device proper to a circuit operated at high line voltage by isolating a drain region from an isolation region and forming the drain region in structure surrounded by another region in the MOSFET. CONSTITUTION:A drain diffusion layer 4 is shaped at the central section of an element region in a form such as a circular form, and a source diffusion layer 3 is disposed to the outer circumferential section through a channel region in which a ringed gate film 5 and a poly Si gate 6 are formed while being contacted with a field film 2 and the isolation layer 14. A drain electrode 9 is connected to the diffusion layer 4 through the contact hole of a layer insulation film 7, partially crossed with the gate electrode 6, and extended and arranged onto the field film 2. Accordingly, since the drain diffusion layer 4 is not contacted directly with the isolation region 14 having high concentration, drain dielectric resistance can be improved, and the element proper to the output circuit, etc. driven at high voltage can be manufactured.
JP2071381A 1981-02-12 1981-02-12 Semiconductor integrated circuit device Pending JPS57133677A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2071381A JPS57133677A (en) 1981-02-12 1981-02-12 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2071381A JPS57133677A (en) 1981-02-12 1981-02-12 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS57133677A true JPS57133677A (en) 1982-08-18

Family

ID=12034786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2071381A Pending JPS57133677A (en) 1981-02-12 1981-02-12 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS57133677A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5040035A (en) * 1989-12-22 1991-08-13 At&T Bell Laboratories MOS devices having improved threshold match
US5338959A (en) * 1992-03-30 1994-08-16 Samsung Electronics Co., Ltd. Thin film transistor with three dimensional multichannel structure
JPH06342903A (en) * 1994-05-23 1994-12-13 Toshiba Corp Lateral conductivity modulation mosfet
KR20030027653A (en) * 2001-09-27 2003-04-07 미쓰비시덴키 가부시키가이샤 Semiconductor device
DE19600049B4 (en) * 1994-12-31 2005-12-15 Hyundai Electronics Industries Co., Ltd., Ichon Selbstbootstrapvorrichtung

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5040035A (en) * 1989-12-22 1991-08-13 At&T Bell Laboratories MOS devices having improved threshold match
US5338959A (en) * 1992-03-30 1994-08-16 Samsung Electronics Co., Ltd. Thin film transistor with three dimensional multichannel structure
JPH06342903A (en) * 1994-05-23 1994-12-13 Toshiba Corp Lateral conductivity modulation mosfet
JPH0789588B2 (en) * 1994-05-23 1995-09-27 株式会社東芝 Lateral conductivity modulation type MOSFET
DE19600049B4 (en) * 1994-12-31 2005-12-15 Hyundai Electronics Industries Co., Ltd., Ichon Selbstbootstrapvorrichtung
KR20030027653A (en) * 2001-09-27 2003-04-07 미쓰비시덴키 가부시키가이샤 Semiconductor device

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