JPS5670662A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS5670662A
JPS5670662A JP14666879A JP14666879A JPS5670662A JP S5670662 A JPS5670662 A JP S5670662A JP 14666879 A JP14666879 A JP 14666879A JP 14666879 A JP14666879 A JP 14666879A JP S5670662 A JPS5670662 A JP S5670662A
Authority
JP
Japan
Prior art keywords
region
type
drain
high density
buried layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14666879A
Other languages
Japanese (ja)
Other versions
JPS6241428B2 (en
Inventor
Toshiyuki Suzuki
Hiroshi Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14666879A priority Critical patent/JPS5670662A/en
Priority to US06/195,683 priority patent/US4394674A/en
Publication of JPS5670662A publication Critical patent/JPS5670662A/en
Publication of JPS6241428B2 publication Critical patent/JPS6241428B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enable formation of the insulated gate type field effect transistor in high yield with high drain withstand voltage and no switch-back phenomenon by forming specific buried layer made of different conductivity type high density region from the drain region. CONSTITUTION:A buried layer 20 is formed at one end electrically connected to a source electrode 28 and made of different conductivity type high density region from the drain region 22 to surround the source region under the source electrode 28, and at the other end extended to the vicinity directly under the end of an off-set region 24. After the buried layer 20 made of P type high density region is, for example, formed by a thermal diffusion process on the low density semiconductor substrate 18 made of P type silicon, the P type low density layer 19 is epitaxially grown. Then, there are formed a diffused layer 21, drain region 22 made on N type high density region, source region 23, off-set region 24 made of N type low density region, gate insulating film 25, gate electrode 26, drain electrode 27 and source electrode 28, and MOS type FET can be thus formed.
JP14666879A 1979-10-09 1979-11-13 Insulated gate type field effect transistor Granted JPS5670662A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP14666879A JPS5670662A (en) 1979-11-13 1979-11-13 Insulated gate type field effect transistor
US06/195,683 US4394674A (en) 1979-10-09 1980-10-09 Insulated gate field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14666879A JPS5670662A (en) 1979-11-13 1979-11-13 Insulated gate type field effect transistor

Publications (2)

Publication Number Publication Date
JPS5670662A true JPS5670662A (en) 1981-06-12
JPS6241428B2 JPS6241428B2 (en) 1987-09-02

Family

ID=15412907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14666879A Granted JPS5670662A (en) 1979-10-09 1979-11-13 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5670662A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60202967A (en) * 1984-02-22 1985-10-14 ゼネラル・エレクトリック・カンパニイ Vertical mosfet device
US5304827A (en) * 1991-10-15 1994-04-19 Texas Instruments Incorporated Performance lateral double-diffused MOS transistor
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics
US5386136A (en) * 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
US7692239B2 (en) 2003-03-10 2010-04-06 Fuji Electric Device Technology Co., Ltd. MIS-type semiconductor device
JP2011199153A (en) * 2010-03-23 2011-10-06 Fujitsu Semiconductor Ltd Semiconductor device and method for manufacturing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60202967A (en) * 1984-02-22 1985-10-14 ゼネラル・エレクトリック・カンパニイ Vertical mosfet device
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics
US5386136A (en) * 1991-05-06 1995-01-31 Siliconix Incorporated Lightly-doped drain MOSFET with improved breakdown characteristics
US5514608A (en) * 1991-05-06 1996-05-07 Siliconix Incorporated Method of making lightly-doped drain DMOS with improved breakdown characteristics
US5304827A (en) * 1991-10-15 1994-04-19 Texas Instruments Incorporated Performance lateral double-diffused MOS transistor
US5382535A (en) * 1991-10-15 1995-01-17 Texas Instruments Incorporated Method of fabricating performance lateral double-diffused MOS transistor
US7692239B2 (en) 2003-03-10 2010-04-06 Fuji Electric Device Technology Co., Ltd. MIS-type semiconductor device
JP2011199153A (en) * 2010-03-23 2011-10-06 Fujitsu Semiconductor Ltd Semiconductor device and method for manufacturing the same

Also Published As

Publication number Publication date
JPS6241428B2 (en) 1987-09-02

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