JPS5670662A - Insulated gate type field effect transistor - Google Patents
Insulated gate type field effect transistorInfo
- Publication number
- JPS5670662A JPS5670662A JP14666879A JP14666879A JPS5670662A JP S5670662 A JPS5670662 A JP S5670662A JP 14666879 A JP14666879 A JP 14666879A JP 14666879 A JP14666879 A JP 14666879A JP S5670662 A JPS5670662 A JP S5670662A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- drain
- high density
- buried layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To enable formation of the insulated gate type field effect transistor in high yield with high drain withstand voltage and no switch-back phenomenon by forming specific buried layer made of different conductivity type high density region from the drain region. CONSTITUTION:A buried layer 20 is formed at one end electrically connected to a source electrode 28 and made of different conductivity type high density region from the drain region 22 to surround the source region under the source electrode 28, and at the other end extended to the vicinity directly under the end of an off-set region 24. After the buried layer 20 made of P type high density region is, for example, formed by a thermal diffusion process on the low density semiconductor substrate 18 made of P type silicon, the P type low density layer 19 is epitaxially grown. Then, there are formed a diffused layer 21, drain region 22 made on N type high density region, source region 23, off-set region 24 made of N type low density region, gate insulating film 25, gate electrode 26, drain electrode 27 and source electrode 28, and MOS type FET can be thus formed.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14666879A JPS5670662A (en) | 1979-11-13 | 1979-11-13 | Insulated gate type field effect transistor |
US06/195,683 US4394674A (en) | 1979-10-09 | 1980-10-09 | Insulated gate field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14666879A JPS5670662A (en) | 1979-11-13 | 1979-11-13 | Insulated gate type field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5670662A true JPS5670662A (en) | 1981-06-12 |
JPS6241428B2 JPS6241428B2 (en) | 1987-09-02 |
Family
ID=15412907
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14666879A Granted JPS5670662A (en) | 1979-10-09 | 1979-11-13 | Insulated gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5670662A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60202967A (en) * | 1984-02-22 | 1985-10-14 | ゼネラル・エレクトリック・カンパニイ | Vertical mosfet device |
US5304827A (en) * | 1991-10-15 | 1994-04-19 | Texas Instruments Incorporated | Performance lateral double-diffused MOS transistor |
US5374843A (en) * | 1991-05-06 | 1994-12-20 | Silinconix, Inc. | Lightly-doped drain MOSFET with improved breakdown characteristics |
US5386136A (en) * | 1991-05-06 | 1995-01-31 | Siliconix Incorporated | Lightly-doped drain MOSFET with improved breakdown characteristics |
US7692239B2 (en) | 2003-03-10 | 2010-04-06 | Fuji Electric Device Technology Co., Ltd. | MIS-type semiconductor device |
JP2011199153A (en) * | 2010-03-23 | 2011-10-06 | Fujitsu Semiconductor Ltd | Semiconductor device and method for manufacturing the same |
-
1979
- 1979-11-13 JP JP14666879A patent/JPS5670662A/en active Granted
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60202967A (en) * | 1984-02-22 | 1985-10-14 | ゼネラル・エレクトリック・カンパニイ | Vertical mosfet device |
US5374843A (en) * | 1991-05-06 | 1994-12-20 | Silinconix, Inc. | Lightly-doped drain MOSFET with improved breakdown characteristics |
US5386136A (en) * | 1991-05-06 | 1995-01-31 | Siliconix Incorporated | Lightly-doped drain MOSFET with improved breakdown characteristics |
US5514608A (en) * | 1991-05-06 | 1996-05-07 | Siliconix Incorporated | Method of making lightly-doped drain DMOS with improved breakdown characteristics |
US5304827A (en) * | 1991-10-15 | 1994-04-19 | Texas Instruments Incorporated | Performance lateral double-diffused MOS transistor |
US5382535A (en) * | 1991-10-15 | 1995-01-17 | Texas Instruments Incorporated | Method of fabricating performance lateral double-diffused MOS transistor |
US7692239B2 (en) | 2003-03-10 | 2010-04-06 | Fuji Electric Device Technology Co., Ltd. | MIS-type semiconductor device |
JP2011199153A (en) * | 2010-03-23 | 2011-10-06 | Fujitsu Semiconductor Ltd | Semiconductor device and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JPS6241428B2 (en) | 1987-09-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5623771A (en) | Semiconductor memory | |
JPS5676574A (en) | Schottky injection electrode type semiconductor device | |
JPS6468966A (en) | Field-effect transistor and manufacture thereof | |
JPS5670662A (en) | Insulated gate type field effect transistor | |
JPS55151363A (en) | Mos semiconductor device and fabricating method of the same | |
JPS6439069A (en) | Field-effect transistor | |
JPS5691470A (en) | Semiconductor | |
JPS5522831A (en) | Manufacturing of semiconductor device | |
JPS5632757A (en) | Insulated gate type transistor and integrated circuit | |
JPS57118664A (en) | Semiconductor device | |
JPS5499578A (en) | Field effect transistor | |
JPS55107229A (en) | Method of manufacturing semiconductor device | |
JPS6461059A (en) | Semiconductor device | |
JPS5544748A (en) | Field-effect transistor | |
JPS55108773A (en) | Insulating gate type field effect transistor | |
JPS57121271A (en) | Field effect transistor | |
JPS5723271A (en) | Field effect transistor | |
JPS54109761A (en) | Manufacture of semiconductor device | |
JPS55151365A (en) | Insulated gate type transistor and semiconductor integrated circuit | |
JPS55102274A (en) | Insulated gate field effect transistor | |
JPS5673468A (en) | Mos type semiconductor device | |
JPS5713765A (en) | Insulated gate type field effect transistor and manufacture thereof | |
JPS5683072A (en) | Transistor circuit device | |
JPS5721865A (en) | Manufacture of semiconductor device | |
JPS572579A (en) | Manufacture of junction type field effect transistor |