JPS6439069A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPS6439069A
JPS6439069A JP62092212A JP9221287A JPS6439069A JP S6439069 A JPS6439069 A JP S6439069A JP 62092212 A JP62092212 A JP 62092212A JP 9221287 A JP9221287 A JP 9221287A JP S6439069 A JPS6439069 A JP S6439069A
Authority
JP
Japan
Prior art keywords
provided
drain
type
bases
surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62092212A
Inventor
Yasuo Sugimoto
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP62092212A priority Critical patent/JPS6439069A/en
Publication of JPS6439069A publication Critical patent/JPS6439069A/en
Application status is Granted legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802Vertical DMOS transistors, i.e. VDMOS transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692Surface layout
    • H01L29/0696Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095Body region, i.e. base region, of DMOS transistors or IGBTs
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction

Abstract

PURPOSE:To improve the reverse breakdown strength of a drain and to improve the breakdown strength of a transistor, by providing an opposite conductivity type second impurity region at a specified depth at a part, between the first and second impurity regions in the surface of the drain. CONSTITUTION:Bases 4 comprising P-type impurities in a specified pattern are provided on the surface of a drain 2, which comprises an N-type low concentration impurity layer on an N-type high concentration semiconductor substrate 1. A P-type impurity region 3 is provided at a specified depth in the surface of the drain 2 between corner parts 4a of the bases 4. An N-type source 5 is provided on the surface of each base 4. A gate 6 is provided on at least a part of each base 4 between the drain 2 and the source 5 through a gate insulating film. An insulating film 7 having connecting windows is provided on the impurity regions 3, the bases 4 and the sources 5. A source electrode 8 is further provided. The impurity region 3, the bases and the sources 5 are connected in this constitution. Therefore, the concentration of an electric field at the corner part 4a of the base 4 is alleviated, and the electric field is uniformly distributed. Thus, the reverse breakdown strength is improved, and the breakdown strength of the transistor can be improved.
JP62092212A 1987-04-14 1987-04-14 Field-effect transistor Granted JPS6439069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62092212A JPS6439069A (en) 1987-04-14 1987-04-14 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62092212A JPS6439069A (en) 1987-04-14 1987-04-14 Field-effect transistor

Publications (1)

Publication Number Publication Date
JPS6439069A true JPS6439069A (en) 1989-02-09

Family

ID=14048137

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62092212A Granted JPS6439069A (en) 1987-04-14 1987-04-14 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6439069A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5341003A (en) * 1991-06-10 1994-08-23 Fuji Electric Co., Ltd. MOS semiconductor device having a main unit element and a sense unit element for monitoring the current in the main unit element
US5621234A (en) * 1991-10-07 1997-04-15 Niipondenso Co., Ltd. Vertical semiconductor device with breakdown voltage improvement region
WO1998006136A1 (en) * 1996-08-01 1998-02-12 Siemens Aktiengesellschaft Semiconductor device that can be controlled by the field effect
US5828218A (en) * 1993-06-30 1998-10-27 Honda Giken Kogyo Kabushiki Kaisha Method of estimating residual capacity of battery
US5898292A (en) * 1996-05-09 1999-04-27 Honda Giken Kogyo Kabushiki Kaisha Process for evaluating remaining capacity of battery
US6635373B2 (en) 2000-01-03 2003-10-21 Nissan Motor Co., Ltd. Fuel cell system and method
JP2007302236A (en) * 2007-05-14 2007-11-22 Honda Motor Co Ltd Vehicular variable steering angle ratio steering device
WO2010021146A1 (en) * 2008-08-21 2010-02-25 パナソニック株式会社 Semiconductor device
US8860039B2 (en) 2010-04-26 2014-10-14 Mitsubishi Electric Corporation Semiconductor device
CN105118862A (en) * 2015-08-24 2015-12-02 电子科技大学 VDMOS device with anti-SEU effect

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607764A (en) * 1983-06-13 1985-01-16 Philips Nv Semiconductor device
JPS61124178A (en) * 1984-11-20 1986-06-11 Mitsubishi Electric Corp Field effect semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS607764A (en) * 1983-06-13 1985-01-16 Philips Nv Semiconductor device
JPS61124178A (en) * 1984-11-20 1986-06-11 Mitsubishi Electric Corp Field effect semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5341003A (en) * 1991-06-10 1994-08-23 Fuji Electric Co., Ltd. MOS semiconductor device having a main unit element and a sense unit element for monitoring the current in the main unit element
US5621234A (en) * 1991-10-07 1997-04-15 Niipondenso Co., Ltd. Vertical semiconductor device with breakdown voltage improvement region
US5828218A (en) * 1993-06-30 1998-10-27 Honda Giken Kogyo Kabushiki Kaisha Method of estimating residual capacity of battery
US5898292A (en) * 1996-05-09 1999-04-27 Honda Giken Kogyo Kabushiki Kaisha Process for evaluating remaining capacity of battery
WO1998006136A1 (en) * 1996-08-01 1998-02-12 Siemens Aktiengesellschaft Semiconductor device that can be controlled by the field effect
US6635373B2 (en) 2000-01-03 2003-10-21 Nissan Motor Co., Ltd. Fuel cell system and method
JP2007302236A (en) * 2007-05-14 2007-11-22 Honda Motor Co Ltd Vehicular variable steering angle ratio steering device
WO2010021146A1 (en) * 2008-08-21 2010-02-25 パナソニック株式会社 Semiconductor device
US8530943B2 (en) 2008-08-21 2013-09-10 Panasonic Corporation Semiconductor device
US8860039B2 (en) 2010-04-26 2014-10-14 Mitsubishi Electric Corporation Semiconductor device
US10062758B2 (en) 2010-04-26 2018-08-28 Mitsubishi Electric Corporation Semiconductor device
CN105118862A (en) * 2015-08-24 2015-12-02 电子科技大学 VDMOS device with anti-SEU effect

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