JPS5522831A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS5522831A
JPS5522831A JP9527078A JP9527078A JPS5522831A JP S5522831 A JPS5522831 A JP S5522831A JP 9527078 A JP9527078 A JP 9527078A JP 9527078 A JP9527078 A JP 9527078A JP S5522831 A JPS5522831 A JP S5522831A
Authority
JP
Japan
Prior art keywords
width
length
voltage
type
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9527078A
Other languages
Japanese (ja)
Inventor
Shigekazu Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP9527078A priority Critical patent/JPS5522831A/en
Publication of JPS5522831A publication Critical patent/JPS5522831A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain the desired threshold value with ease by adjusting both the channel length and width at the time of changing the threshold voltage of MOS transistor without conducting the ion injection process.
CONSTITUTION: A P-type soure zone 1 and P-type drain zone 2 are formed on a N-type Si substrate 6 through deffusion. On the exposed substrate between the zones 1 and 2 applied is a SiO2 gate insulation film 7, on which an Algate electrode 3 is attached. The thereshold voltage of thus obtained element can be varied by changing length 4 and width 5 of a channel zone produced between the zones 1 and 2. For example, the threshold voltage is increased with increase of the length 4 when the width 5 is constant, while the voltage is reduced with increase of the width 5 when the length 4 is constant. This leads to the considerably simplified processes due to no requirement of ion injection process and heat treatment.
COPYRIGHT: (C)1980,JPO&Japio
JP9527078A 1978-08-04 1978-08-04 Manufacturing of semiconductor device Pending JPS5522831A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9527078A JPS5522831A (en) 1978-08-04 1978-08-04 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9527078A JPS5522831A (en) 1978-08-04 1978-08-04 Manufacturing of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5522831A true JPS5522831A (en) 1980-02-18

Family

ID=14133072

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9527078A Pending JPS5522831A (en) 1978-08-04 1978-08-04 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5522831A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS627599A (en) * 1985-07-04 1987-01-14 株式会社スタット Magnetic card and magnetic-card recording regenerator using said card
JPS62159301A (en) * 1986-01-07 1987-07-15 Dainippon Printing Co Ltd Magnetic recording card and its data recording method
JPS62212904A (en) * 1986-03-13 1987-09-18 Glory Ltd Generation of certifying and identifying body for certifying and identifying medium
JPH05182033A (en) * 1991-07-30 1993-07-23 Dainippon Printing Co Ltd Information recording method
JPH05182034A (en) * 1991-07-30 1993-07-23 Dainippon Printing Co Ltd Forgery preventing method
JPH0590857U (en) * 1991-05-29 1993-12-10 株式会社小桜建装 Plug

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109684A (en) * 1974-01-24 1975-08-28
JPS5111575A (en) * 1974-07-19 1976-01-29 Mitsubishi Electric Corp

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50109684A (en) * 1974-01-24 1975-08-28
JPS5111575A (en) * 1974-07-19 1976-01-29 Mitsubishi Electric Corp

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS627599A (en) * 1985-07-04 1987-01-14 株式会社スタット Magnetic card and magnetic-card recording regenerator using said card
JPH0548551B2 (en) * 1985-07-04 1993-07-21 Sutatsuto Sapurai Kk
JPS62159301A (en) * 1986-01-07 1987-07-15 Dainippon Printing Co Ltd Magnetic recording card and its data recording method
JPS62212904A (en) * 1986-03-13 1987-09-18 Glory Ltd Generation of certifying and identifying body for certifying and identifying medium
JPH0590857U (en) * 1991-05-29 1993-12-10 株式会社小桜建装 Plug
JPH05182033A (en) * 1991-07-30 1993-07-23 Dainippon Printing Co Ltd Information recording method
JPH05182034A (en) * 1991-07-30 1993-07-23 Dainippon Printing Co Ltd Forgery preventing method

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