JPS5612773A - Silicon gate mos field-effect transistor - Google Patents

Silicon gate mos field-effect transistor

Info

Publication number
JPS5612773A
JPS5612773A JP8873279A JP8873279A JPS5612773A JP S5612773 A JPS5612773 A JP S5612773A JP 8873279 A JP8873279 A JP 8873279A JP 8873279 A JP8873279 A JP 8873279A JP S5612773 A JPS5612773 A JP S5612773A
Authority
JP
Japan
Prior art keywords
source
drain
effect transistor
mos field
silicon gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8873279A
Other languages
Japanese (ja)
Other versions
JPS6331111B2 (en
Inventor
Toshiyuki Misawa
Tatsuji Asakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP8873279A priority Critical patent/JPS5612773A/en
Publication of JPS5612773A publication Critical patent/JPS5612773A/en
Publication of JPS6331111B2 publication Critical patent/JPS6331111B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To obtain a correct reference voltage by providing at the end of a source- drain channel side a region consisted of a layer having a specific polarity in a process preceding a source-drain formation. CONSTITUTION:A silicon layer 306, having a source-drain of P-type semiconductor, a gate of N-type semiconductor and a P-type of an MOSFET, is provided at the channel side of the source-drain. In this case, the spread of impurity ion in a diffusion process is taken into consideration and the both ends 320 and 321 of the channel are to be formed so that they are located at the inner side (channel side) of the boundaries 310 and 311 of a P-type polycrystalline and an N-type polycrystalline silicon respectively.
JP8873279A 1979-07-12 1979-07-12 Silicon gate mos field-effect transistor Granted JPS5612773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8873279A JPS5612773A (en) 1979-07-12 1979-07-12 Silicon gate mos field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8873279A JPS5612773A (en) 1979-07-12 1979-07-12 Silicon gate mos field-effect transistor

Publications (2)

Publication Number Publication Date
JPS5612773A true JPS5612773A (en) 1981-02-07
JPS6331111B2 JPS6331111B2 (en) 1988-06-22

Family

ID=13951086

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8873279A Granted JPS5612773A (en) 1979-07-12 1979-07-12 Silicon gate mos field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5612773A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5466958A (en) * 1992-10-30 1995-11-14 Kabushiki Kaisha Toshiba MOS-type semiconductor device having electrode structure capable of coping with short-channel effect and manufacturing method thereof
JP2014053414A (en) * 2012-09-06 2014-03-20 Denso Corp Semiconductor device manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5286084A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Field effect transistor
JPS5432078A (en) * 1977-08-16 1979-03-09 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5286084A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Field effect transistor
JPS5432078A (en) * 1977-08-16 1979-03-09 Nec Corp Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5466958A (en) * 1992-10-30 1995-11-14 Kabushiki Kaisha Toshiba MOS-type semiconductor device having electrode structure capable of coping with short-channel effect and manufacturing method thereof
US5756365A (en) * 1992-10-30 1998-05-26 Kabushiki Kaisha Toshiba Method of manufacturing MOS-type semiconductor device having electrode structure capable of coping with short-channel effects
JP2014053414A (en) * 2012-09-06 2014-03-20 Denso Corp Semiconductor device manufacturing method

Also Published As

Publication number Publication date
JPS6331111B2 (en) 1988-06-22

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