JPS57201080A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57201080A
JPS57201080A JP8563981A JP8563981A JPS57201080A JP S57201080 A JPS57201080 A JP S57201080A JP 8563981 A JP8563981 A JP 8563981A JP 8563981 A JP8563981 A JP 8563981A JP S57201080 A JPS57201080 A JP S57201080A
Authority
JP
Japan
Prior art keywords
mos transistor
gap
semiconductor substrate
sequently
depth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8563981A
Other languages
Japanese (ja)
Inventor
Norio Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP8563981A priority Critical patent/JPS57201080A/en
Publication of JPS57201080A publication Critical patent/JPS57201080A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To acquire a MOS type semiconductor device of high density, by aligning a MOS transistor channel to a semiconductor substrate depth. CONSTITUTION:A gap 8 is provided on a portion to be a channel region of MOS transistor. A thermo-oxide film 6 and a nitride film 7 are formed sequently. Next, a thick oxide film 9 is formed on a field region by selective diffusion method. A gate insulation film 10 and a gate electrode 11 are formed sequently on the gap 8. Next, source and drain regions 12, 12' are formed to constitute a MOS transistor. The gap 8 is provided on a semiconductor substrate 1'. It is formed as a channel region 13 of MOS transistor to align the semiconductor substrate 1' depth. This constitutes a fine MOS transistor.
JP8563981A 1981-06-05 1981-06-05 Semiconductor device Pending JPS57201080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8563981A JPS57201080A (en) 1981-06-05 1981-06-05 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8563981A JPS57201080A (en) 1981-06-05 1981-06-05 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57201080A true JPS57201080A (en) 1982-12-09

Family

ID=13864393

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8563981A Pending JPS57201080A (en) 1981-06-05 1981-06-05 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57201080A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006190952A (en) * 2004-12-30 2006-07-20 Hynix Semiconductor Inc Manufacturing method of semiconductor element
JP2006210913A (en) * 2005-01-31 2006-08-10 Hynix Semiconductor Inc Semiconductor element having stepped gate and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006190952A (en) * 2004-12-30 2006-07-20 Hynix Semiconductor Inc Manufacturing method of semiconductor element
JP4634877B2 (en) * 2004-12-30 2011-02-16 株式会社ハイニックスセミコンダクター Manufacturing method of semiconductor device
JP2006210913A (en) * 2005-01-31 2006-08-10 Hynix Semiconductor Inc Semiconductor element having stepped gate and manufacturing method thereof

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