JPS5538019A - Manufacturing of semiconductor device - Google Patents
Manufacturing of semiconductor deviceInfo
- Publication number
- JPS5538019A JPS5538019A JP11050678A JP11050678A JPS5538019A JP S5538019 A JPS5538019 A JP S5538019A JP 11050678 A JP11050678 A JP 11050678A JP 11050678 A JP11050678 A JP 11050678A JP S5538019 A JPS5538019 A JP S5538019A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- crystal
- film
- source
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To form an Si gate MOS transistor, capable of preventing a short circuit between an Si gate and a source or between drains, by forming an oxide-film-forming multi-crystal Si-layer on a semiconductor base plate surface through an insulation film.
CONSTITUTION: A field oxide film 2 or a p-type Si base plate 1 is etched to uncover an element-forming region, and a gate oxide film 3 and a multi-crystal Si gate electrode 4 are formed in such an order. N-type source drain regions 7 and 8 are formed by ion implantation method by uitlizing self-alignment method using this Si gate electrode 4 as a mask. And then, a relatively thin SiO2 film 10 is formed on an entire surface, and electrode windows 7' and 8' for source drain are opened. A multi-crystal Si 11 is etched on an entire surface and this is oxidized to form an insulation layer 12. This mechanism does not allow unoxidized multi-crystal Si to remain between a gate and a source or near drains and therefore occurrence of a short circuit can be prevented.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11050678A JPS5538019A (en) | 1978-09-08 | 1978-09-08 | Manufacturing of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11050678A JPS5538019A (en) | 1978-09-08 | 1978-09-08 | Manufacturing of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5538019A true JPS5538019A (en) | 1980-03-17 |
Family
ID=14537491
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11050678A Pending JPS5538019A (en) | 1978-09-08 | 1978-09-08 | Manufacturing of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5538019A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63130919A (en) * | 1986-11-19 | 1988-06-03 | Mitsubishi Metal Corp | Sintered oil bearing and its manufacture |
JPS63204653A (en) * | 1987-02-19 | 1988-08-24 | Sanyo Electric Co Ltd | Manufacture of mos-type semiconductor device |
JPS63204654A (en) * | 1987-02-19 | 1988-08-24 | Sanyo Electric Co Ltd | Manufacture of mos-type semiconductor device |
JPS6415522A (en) * | 1987-07-10 | 1989-01-19 | Sankyo Seiki Seisakusho Kk | Ferro-copper series sintered oil containing bearing |
-
1978
- 1978-09-08 JP JP11050678A patent/JPS5538019A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63130919A (en) * | 1986-11-19 | 1988-06-03 | Mitsubishi Metal Corp | Sintered oil bearing and its manufacture |
JPS63204653A (en) * | 1987-02-19 | 1988-08-24 | Sanyo Electric Co Ltd | Manufacture of mos-type semiconductor device |
JPS63204654A (en) * | 1987-02-19 | 1988-08-24 | Sanyo Electric Co Ltd | Manufacture of mos-type semiconductor device |
JPS6415522A (en) * | 1987-07-10 | 1989-01-19 | Sankyo Seiki Seisakusho Kk | Ferro-copper series sintered oil containing bearing |
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