JPS5538019A - Manufacturing of semiconductor device - Google Patents

Manufacturing of semiconductor device

Info

Publication number
JPS5538019A
JPS5538019A JP11050678A JP11050678A JPS5538019A JP S5538019 A JPS5538019 A JP S5538019A JP 11050678 A JP11050678 A JP 11050678A JP 11050678 A JP11050678 A JP 11050678A JP S5538019 A JPS5538019 A JP S5538019A
Authority
JP
Japan
Prior art keywords
gate
crystal
film
source
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11050678A
Other languages
Japanese (ja)
Inventor
Kazunari Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11050678A priority Critical patent/JPS5538019A/en
Publication of JPS5538019A publication Critical patent/JPS5538019A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form an Si gate MOS transistor, capable of preventing a short circuit between an Si gate and a source or between drains, by forming an oxide-film-forming multi-crystal Si-layer on a semiconductor base plate surface through an insulation film.
CONSTITUTION: A field oxide film 2 or a p-type Si base plate 1 is etched to uncover an element-forming region, and a gate oxide film 3 and a multi-crystal Si gate electrode 4 are formed in such an order. N-type source drain regions 7 and 8 are formed by ion implantation method by uitlizing self-alignment method using this Si gate electrode 4 as a mask. And then, a relatively thin SiO2 film 10 is formed on an entire surface, and electrode windows 7' and 8' for source drain are opened. A multi-crystal Si 11 is etched on an entire surface and this is oxidized to form an insulation layer 12. This mechanism does not allow unoxidized multi-crystal Si to remain between a gate and a source or near drains and therefore occurrence of a short circuit can be prevented.
COPYRIGHT: (C)1980,JPO&Japio
JP11050678A 1978-09-08 1978-09-08 Manufacturing of semiconductor device Pending JPS5538019A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11050678A JPS5538019A (en) 1978-09-08 1978-09-08 Manufacturing of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11050678A JPS5538019A (en) 1978-09-08 1978-09-08 Manufacturing of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5538019A true JPS5538019A (en) 1980-03-17

Family

ID=14537491

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11050678A Pending JPS5538019A (en) 1978-09-08 1978-09-08 Manufacturing of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5538019A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63130919A (en) * 1986-11-19 1988-06-03 Mitsubishi Metal Corp Sintered oil bearing and its manufacture
JPS63204653A (en) * 1987-02-19 1988-08-24 Sanyo Electric Co Ltd Manufacture of mos-type semiconductor device
JPS63204654A (en) * 1987-02-19 1988-08-24 Sanyo Electric Co Ltd Manufacture of mos-type semiconductor device
JPS6415522A (en) * 1987-07-10 1989-01-19 Sankyo Seiki Seisakusho Kk Ferro-copper series sintered oil containing bearing

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63130919A (en) * 1986-11-19 1988-06-03 Mitsubishi Metal Corp Sintered oil bearing and its manufacture
JPS63204653A (en) * 1987-02-19 1988-08-24 Sanyo Electric Co Ltd Manufacture of mos-type semiconductor device
JPS63204654A (en) * 1987-02-19 1988-08-24 Sanyo Electric Co Ltd Manufacture of mos-type semiconductor device
JPS6415522A (en) * 1987-07-10 1989-01-19 Sankyo Seiki Seisakusho Kk Ferro-copper series sintered oil containing bearing

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