JPS5758363A - Manufacture of mos type semiconductor device - Google Patents
Manufacture of mos type semiconductor deviceInfo
- Publication number
- JPS5758363A JPS5758363A JP13301480A JP13301480A JPS5758363A JP S5758363 A JPS5758363 A JP S5758363A JP 13301480 A JP13301480 A JP 13301480A JP 13301480 A JP13301480 A JP 13301480A JP S5758363 A JPS5758363 A JP S5758363A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- substrate
- type semiconductor
- mos type
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain an MOS type semiconductor to stabilize threshold voltage by a method wherein after a gate oxide film is formed on the surface of an Si substrate, a laser beam is irradiated the gate oxide film. CONSTITUTION:After field oxide films 2 are formed on the Si substrate 1, the gate oxide film 3 of 500-1,500Angstrom thickness is formed by thermal oxidation. Then the laser beam 4 is irradiated through the oxide film 3 to anneal the substrate 1 and the interface between the substrate 1 and the oxide film 3. After then an electrode 5 is formed at the prescribed part on the oxide film 3. The unnecessitated part of the oxide film 3 is photolithographed, and source and drain regions 6, 7 are formed in the Si substrate 1 by predeposition and thermal diffusion. Accordingly the MOS transistor to reduce surface state and to stabilize threshold voltage is manufactured.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13301480A JPS5758363A (en) | 1980-09-26 | 1980-09-26 | Manufacture of mos type semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13301480A JPS5758363A (en) | 1980-09-26 | 1980-09-26 | Manufacture of mos type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5758363A true JPS5758363A (en) | 1982-04-08 |
Family
ID=15094773
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13301480A Pending JPS5758363A (en) | 1980-09-26 | 1980-09-26 | Manufacture of mos type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5758363A (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58184732A (en) * | 1982-04-23 | 1983-10-28 | Nec Corp | Annealing of semiconductor device |
JPS5961138A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6086845A (en) * | 1983-10-19 | 1985-05-16 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS60116166A (en) * | 1983-11-29 | 1985-06-22 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS60216561A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Heat-treating method |
US5219773A (en) * | 1990-06-26 | 1993-06-15 | Massachusetts Institute Of Technology | Method of making reoxidized nitrided oxide MOSFETs |
US6544825B1 (en) | 1992-12-26 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a MIS transistor |
US6835607B2 (en) | 1993-10-01 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method for manufacturing the same |
US8835271B2 (en) | 2002-04-09 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US9105727B2 (en) | 2002-04-09 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US10133139B2 (en) | 2002-05-17 | 2018-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
-
1980
- 1980-09-26 JP JP13301480A patent/JPS5758363A/en active Pending
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58184732A (en) * | 1982-04-23 | 1983-10-28 | Nec Corp | Annealing of semiconductor device |
JPS5961138A (en) * | 1982-09-30 | 1984-04-07 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0586651B2 (en) * | 1982-09-30 | 1993-12-13 | Fujitsu Ltd | |
JPS6086845A (en) * | 1983-10-19 | 1985-05-16 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS60116166A (en) * | 1983-11-29 | 1985-06-22 | Fujitsu Ltd | Manufacture of semiconductor device |
JPH0578188B2 (en) * | 1983-11-29 | 1993-10-28 | Fujitsu Ltd | |
JPS60216561A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Heat-treating method |
US5219773A (en) * | 1990-06-26 | 1993-06-15 | Massachusetts Institute Of Technology | Method of making reoxidized nitrided oxide MOSFETs |
US7351615B2 (en) | 1992-12-26 | 2008-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a MIS transistor |
US6544825B1 (en) | 1992-12-26 | 2003-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a MIS transistor |
US6835607B2 (en) | 1993-10-01 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and a method for manufacturing the same |
US7170138B2 (en) | 1993-10-01 | 2007-01-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7301209B2 (en) | 1993-10-01 | 2007-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US10050065B2 (en) | 2002-04-09 | 2018-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US9105727B2 (en) | 2002-04-09 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US9406806B2 (en) | 2002-04-09 | 2016-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US9666614B2 (en) | 2002-04-09 | 2017-05-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US8835271B2 (en) | 2002-04-09 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US10083995B2 (en) | 2002-04-09 | 2018-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US10700106B2 (en) | 2002-04-09 | 2020-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US10854642B2 (en) | 2002-04-09 | 2020-12-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and display device using the same |
US11101299B2 (en) | 2002-04-09 | 2021-08-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor display device |
US10133139B2 (en) | 2002-05-17 | 2018-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US10527903B2 (en) | 2002-05-17 | 2020-01-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US11422423B2 (en) | 2002-05-17 | 2022-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
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