JPS5621367A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5621367A
JPS5621367A JP9584079A JP9584079A JPS5621367A JP S5621367 A JPS5621367 A JP S5621367A JP 9584079 A JP9584079 A JP 9584079A JP 9584079 A JP9584079 A JP 9584079A JP S5621367 A JPS5621367 A JP S5621367A
Authority
JP
Japan
Prior art keywords
laser beam
drain
source
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9584079A
Other languages
Japanese (ja)
Inventor
Hiroo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9584079A priority Critical patent/JPS5621367A/en
Publication of JPS5621367A publication Critical patent/JPS5621367A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve annealing effect for source layer and drain layer remarkably, by protecting the top of a channel section with metallic film and radiating laser beam thereon. CONSTITUTION:A field oxide film 2 and a gate oxide film 3 are prepared on a p- type Si substrate 1. And a gate electrode 4 is formed by piling a doped poly Si in layer and providing a laser beam reflecting mask 5, such as W, etc. And then, a source and a drain are selectively annealed by injecting As ion to form an n<+>-type source 6 and a drain 7, and also by radiating laser beam appropriately. Then, it is finished by providing an insulation film, an electrode and a wiring in accordance with the usual manner. Because of the reflecting mask 5, the laser beam never reaches a channel forming region of the substrate, and therefore, the selective annealing can be achieved extremely satisfactorily.
JP9584079A 1979-07-27 1979-07-27 Manufacture of semiconductor device Pending JPS5621367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9584079A JPS5621367A (en) 1979-07-27 1979-07-27 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9584079A JPS5621367A (en) 1979-07-27 1979-07-27 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5621367A true JPS5621367A (en) 1981-02-27

Family

ID=14148567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9584079A Pending JPS5621367A (en) 1979-07-27 1979-07-27 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5621367A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842273A (en) * 1981-09-07 1983-03-11 Nec Corp Manufacture of semiconductor device
US4833097A (en) * 1986-05-12 1989-05-23 Butler Alan L Fabrication of MOS-transistors
EP1104934A2 (en) * 1999-11-23 2001-06-06 Lucent Technologies Inc. Method to selectively heat semiconductor wafers

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111170A (en) * 1979-02-20 1980-08-27 Nec Corp Method of manufacturing semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111170A (en) * 1979-02-20 1980-08-27 Nec Corp Method of manufacturing semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842273A (en) * 1981-09-07 1983-03-11 Nec Corp Manufacture of semiconductor device
US4833097A (en) * 1986-05-12 1989-05-23 Butler Alan L Fabrication of MOS-transistors
EP1104934A2 (en) * 1999-11-23 2001-06-06 Lucent Technologies Inc. Method to selectively heat semiconductor wafers
EP1104934A3 (en) * 1999-11-23 2001-10-17 Lucent Technologies Inc. Method to selectively heat semiconductor wafers

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