JPS5736863A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5736863A
JPS5736863A JP11171980A JP11171980A JPS5736863A JP S5736863 A JPS5736863 A JP S5736863A JP 11171980 A JP11171980 A JP 11171980A JP 11171980 A JP11171980 A JP 11171980A JP S5736863 A JPS5736863 A JP S5736863A
Authority
JP
Japan
Prior art keywords
injected
injecting
type
type impurity
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11171980A
Other languages
Japanese (ja)
Inventor
Yasunobu Tanizaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11171980A priority Critical patent/JPS5736863A/en
Publication of JPS5736863A publication Critical patent/JPS5736863A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To improve the electric characteristic of a semiconductor device by injecting one conductive type impurity forming the channel of a J-FET, then injecting the same conductive type impurity on the surface and further injecting the reverse conductive type impurity to form a gate region. CONSTITUTION:After p type source and drain regions 6, 7 are formed in an N type semiconductor substrate 2, B is injected to form a p type channel region 8 and to form a gate oxidized film 11a, B is then lightly injected on the surface to compensate the decrease in the surface density, P is then injected to form an N type gate region 9, a gate electrode 16, source and drain electrodes 14, 15 are eventually formed, and a J-FET is thus formed. Since no diffusion is performed in this manner, it can eliminate the adverse influence to the other element, thereby preferably maintaining the electrice characteristics of an IC.
JP11171980A 1980-08-15 1980-08-15 Manufacture of semiconductor device Pending JPS5736863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11171980A JPS5736863A (en) 1980-08-15 1980-08-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11171980A JPS5736863A (en) 1980-08-15 1980-08-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5736863A true JPS5736863A (en) 1982-02-27

Family

ID=14568424

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11171980A Pending JPS5736863A (en) 1980-08-15 1980-08-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5736863A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912053A (en) * 1988-02-01 1990-03-27 Harris Corporation Ion implanted JFET with self-aligned source and drain
US5219776A (en) * 1990-07-30 1993-06-15 Sharp Kabushiki Kaisha Method of manufacturing semiconductor device
US10433500B2 (en) 2015-05-19 2019-10-08 Sungsoon SHIN Rotating ejection type oozing hose for plant cultivation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4912053A (en) * 1988-02-01 1990-03-27 Harris Corporation Ion implanted JFET with self-aligned source and drain
US5219776A (en) * 1990-07-30 1993-06-15 Sharp Kabushiki Kaisha Method of manufacturing semiconductor device
US10433500B2 (en) 2015-05-19 2019-10-08 Sungsoon SHIN Rotating ejection type oozing hose for plant cultivation

Similar Documents

Publication Publication Date Title
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS6439069A (en) Field-effect transistor
JPS5736863A (en) Manufacture of semiconductor device
JPS54161282A (en) Manufacture of mos semiconductor device
JPS5687368A (en) Semiconductor device
JPS56126973A (en) Mos field effect transistor
JPS56126977A (en) Junction type field effect transistor
JPS57166067A (en) Bias generating unit for substrate
JPS56165358A (en) Semiconductor device
JPS5766671A (en) Semiconductor device
JPS5713769A (en) Semiconductor device and manufacture thereof
JPS6450465A (en) Semiconductor device
JPS6461060A (en) Semiconductor device
JPS6417475A (en) Manufacture of mos semiconductor device
JPS572579A (en) Manufacture of junction type field effect transistor
JPS55102274A (en) Insulated gate field effect transistor
JPS5732673A (en) Semiconductor device and manufacture thereof
JPS5642374A (en) Field effect transistor
JPS52136583A (en) Mos type semiconductor device
JPS5346287A (en) Production of semiconductor integrated circuit
JPS5654069A (en) High withstand voltage mos field-effect semiconductor device
JPS55120169A (en) Semiconductor device
JPS52146568A (en) Production of silicon gate mos type semiconductor integrated circuit device
JPS56126978A (en) Manufacture of junction type field effect transistor
JPS57106078A (en) Mos semiconductor device