JPS57106078A - Mos semiconductor device - Google Patents

Mos semiconductor device

Info

Publication number
JPS57106078A
JPS57106078A JP18235180A JP18235180A JPS57106078A JP S57106078 A JPS57106078 A JP S57106078A JP 18235180 A JP18235180 A JP 18235180A JP 18235180 A JP18235180 A JP 18235180A JP S57106078 A JPS57106078 A JP S57106078A
Authority
JP
Japan
Prior art keywords
drain
channel region
oxidized film
gate
proximity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18235180A
Other languages
Japanese (ja)
Inventor
Takashi Saigo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP18235180A priority Critical patent/JPS57106078A/en
Publication of JPS57106078A publication Critical patent/JPS57106078A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)

Abstract

PURPOSE:To prevent the deteriorating of an element due to a hot electron, by a method wherein an insulating film is embedded in the surface in the proximity of a drain in a channel region under a gate electrode. CONSTITUTION:A gate electrode 9, a source 12, and a drain 13 are formed on a p type single crystal Si substrate to form a n-channel MOS enhancement type transistor. The transistor is constituted such that an oxidized film 6 is embedded in the proximity of the drain 13 in a channel region 11, and a gate oxidized film 7 at said part of the channel region is substantially thicker than that at the other part. This prevents the increase in an electric field applied to the gate oxidized film and a drain depletion layer, and as a result, permits the prevention of deterioration in an element due to a hot electron.
JP18235180A 1980-12-23 1980-12-23 Mos semiconductor device Pending JPS57106078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18235180A JPS57106078A (en) 1980-12-23 1980-12-23 Mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18235180A JPS57106078A (en) 1980-12-23 1980-12-23 Mos semiconductor device

Publications (1)

Publication Number Publication Date
JPS57106078A true JPS57106078A (en) 1982-07-01

Family

ID=16116786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18235180A Pending JPS57106078A (en) 1980-12-23 1980-12-23 Mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS57106078A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5105247A (en) * 1990-08-03 1992-04-14 Cavanaugh Marion E Quantum field effect device with source extension region formed under a gate and between the source and drain regions
US5239195A (en) * 1990-05-17 1993-08-24 Hello S.A. Mos transistor with high threshold voltage

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5239195A (en) * 1990-05-17 1993-08-24 Hello S.A. Mos transistor with high threshold voltage
US5105247A (en) * 1990-08-03 1992-04-14 Cavanaugh Marion E Quantum field effect device with source extension region formed under a gate and between the source and drain regions

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