GB2012480A - Heterostructure field effect transistors - Google Patents

Heterostructure field effect transistors

Info

Publication number
GB2012480A
GB2012480A GB7900218A GB7900218A GB2012480A GB 2012480 A GB2012480 A GB 2012480A GB 7900218 A GB7900218 A GB 7900218A GB 7900218 A GB7900218 A GB 7900218A GB 2012480 A GB2012480 A GB 2012480A
Authority
GB
United Kingdom
Prior art keywords
field effect
layer
effect transistors
heterostructure field
usual
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB7900218A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB7900218A priority Critical patent/GB2012480A/en
Publication of GB2012480A publication Critical patent/GB2012480A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

A field effect transistor is described in which a semi insulating substrate 1 carries a layer 2 of N or P type material on which source drain gate contacts 3-5 are formed and to improve the properties of the potential barrier a further layer 6 of semiconducting material is interposed between the usual N or P type layer and the semi insulating substrate, the further layer being of a different material to the usual N or P type layer, but with matched lattice constants, so as to afford a field effect transistor of heterostructure form. <IMAGE>
GB7900218A 1978-01-12 1979-01-04 Heterostructure field effect transistors Withdrawn GB2012480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB7900218A GB2012480A (en) 1978-01-12 1979-01-04 Heterostructure field effect transistors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB131278 1978-01-12
GB7900218A GB2012480A (en) 1978-01-12 1979-01-04 Heterostructure field effect transistors

Publications (1)

Publication Number Publication Date
GB2012480A true GB2012480A (en) 1979-07-25

Family

ID=26236639

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7900218A Withdrawn GB2012480A (en) 1978-01-12 1979-01-04 Heterostructure field effect transistors

Country Status (1)

Country Link
GB (1) GB2012480A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2465318A1 (en) * 1979-09-10 1981-03-20 Thomson Csf FIELD EFFECT TRANSISTOR WITH HIGH BREAKAGE FREQUENCY
EP0051271A1 (en) * 1980-10-31 1982-05-12 Hitachi, Ltd. Heterojunction semiconductor device
EP0205164A2 (en) * 1985-06-14 1986-12-17 AT&T Corp. Semiconductor device structure
EP0264932A1 (en) * 1986-10-24 1988-04-27 Sumitomo Electric Industries Limited Field effect transistor
USRE33584E (en) * 1979-12-28 1991-05-07 Fujitsu Limited High electron mobility single heterojunction semiconductor devices

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2465318A1 (en) * 1979-09-10 1981-03-20 Thomson Csf FIELD EFFECT TRANSISTOR WITH HIGH BREAKAGE FREQUENCY
EP0025742A1 (en) * 1979-09-10 1981-03-25 Thomson-Csf Field-effect transistor having a high cut-off frequency
USRE33584E (en) * 1979-12-28 1991-05-07 Fujitsu Limited High electron mobility single heterojunction semiconductor devices
EP0051271A1 (en) * 1980-10-31 1982-05-12 Hitachi, Ltd. Heterojunction semiconductor device
EP0205164A2 (en) * 1985-06-14 1986-12-17 AT&T Corp. Semiconductor device structure
EP0205164A3 (en) * 1985-06-14 1987-12-23 American Telephone And Telegraph Company Semiconductor device structure
EP0264932A1 (en) * 1986-10-24 1988-04-27 Sumitomo Electric Industries Limited Field effect transistor

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)