JPS56146276A - Insulating gate type field-effect transistor - Google Patents

Insulating gate type field-effect transistor

Info

Publication number
JPS56146276A
JPS56146276A JP2491480A JP2491480A JPS56146276A JP S56146276 A JPS56146276 A JP S56146276A JP 2491480 A JP2491480 A JP 2491480A JP 2491480 A JP2491480 A JP 2491480A JP S56146276 A JPS56146276 A JP S56146276A
Authority
JP
Japan
Prior art keywords
impurity density
channel region
film thickness
tox
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2491480A
Other languages
Japanese (ja)
Other versions
JPS626670B2 (en
Inventor
Masamizu Konaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP2491480A priority Critical patent/JPS56146276A/en
Publication of JPS56146276A publication Critical patent/JPS56146276A/en
Publication of JPS626670B2 publication Critical patent/JPS626670B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation

Abstract

PURPOSE:To improve the triode characteristics of the subjet transistor by a method wherein the ratio of the effective channel length between a source and a drain, and a gate oxidation film thickness is brought down to a small one, and in addition, a high impurity density bruried layer and a low impurity density buried layer are provided. CONSTITUTION:The impurity density of the substrate 1 and the channel region 9 is maintained below 4X10<15>/cm<2>. The depth from the surface of the channel region 9 of the high impurity buried layer 8 is maintained below 0.4mum. The film thickness Tox of the gate insulating film 2 is selected at 1,000-3,000Angstrom and the ratio Leff/ Tox of the film thickness Tox and an effective channel length Leff is brought down to 10 or below. On the interface of the channel region 9 and the gate insulating film 2, the impurity density layer 10 having the same conductive type as the channel region 9, the thickness of 1mum or below and the impurity density of 1X10<16>-5X 10<16>/cm<2>, is provided.
JP2491480A 1980-02-29 1980-02-29 Insulating gate type field-effect transistor Granted JPS56146276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2491480A JPS56146276A (en) 1980-02-29 1980-02-29 Insulating gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2491480A JPS56146276A (en) 1980-02-29 1980-02-29 Insulating gate type field-effect transistor

Publications (2)

Publication Number Publication Date
JPS56146276A true JPS56146276A (en) 1981-11-13
JPS626670B2 JPS626670B2 (en) 1987-02-12

Family

ID=12151428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2491480A Granted JPS56146276A (en) 1980-02-29 1980-02-29 Insulating gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS56146276A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58165381A (en) * 1982-03-09 1983-09-30 シ−メンス・アクチエンゲゼルシヤフト High withstand voltage mos transistor
JPS59107560A (en) * 1982-12-13 1984-06-21 Hitachi Ltd Semiconductor integrated circuit device
JPS6010780A (en) * 1983-06-30 1985-01-19 Fujitsu Ltd Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58165381A (en) * 1982-03-09 1983-09-30 シ−メンス・アクチエンゲゼルシヤフト High withstand voltage mos transistor
JPS59107560A (en) * 1982-12-13 1984-06-21 Hitachi Ltd Semiconductor integrated circuit device
JPH058584B2 (en) * 1982-12-13 1993-02-02 Hitachi Ltd
JPS6010780A (en) * 1983-06-30 1985-01-19 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS626670B2 (en) 1987-02-12

Similar Documents

Publication Publication Date Title
JPS56125868A (en) Thin-film semiconductor device
EP0148595A3 (en) Method of fabricating mesa mosfet using overhang mask and resulting structure
JPS55151363A (en) Mos semiconductor device and fabricating method of the same
JPS56146276A (en) Insulating gate type field-effect transistor
JPS5731177A (en) Insulated gate type field effect transistor
JPS5381087A (en) Gallium aresenide field effect transistor
JPS56146275A (en) Insulating gate type field-effect transistor
JPS5688362A (en) Vertical type power mos transistor
JPS5544748A (en) Field-effect transistor
JPS5654071A (en) Insulated gate field-effect transistor
JPS5567160A (en) Semiconductor memory storage
JPS5331977A (en) Production of insulated gate type field effect transistors
JPS5437584A (en) Field effect semiconductor device of insulation gate type
JPS5376771A (en) Insulated gate type field effect transistor
JPS5713765A (en) Insulated gate type field effect transistor and manufacture thereof
JPS55108773A (en) Insulating gate type field effect transistor
JPS53144686A (en) Production of semiconductor device
JPS57112075A (en) Insulating gate fet
JPS55102274A (en) Insulated gate field effect transistor
JPS56135958A (en) Complementary insulation gate type field effect semiconductor device
JPS52144980A (en) Sos semiconductor device
JPS54107679A (en) Semiconductor device
JPS54102877A (en) Field effect transistor
JPS5432981A (en) Manufacture of longitudinal mos field effect transistor
JPS54124686A (en) Mos transistor and its production