JPS5376771A - Insulated gate type field effect transistor - Google Patents
Insulated gate type field effect transistorInfo
- Publication number
- JPS5376771A JPS5376771A JP15194376A JP15194376A JPS5376771A JP S5376771 A JPS5376771 A JP S5376771A JP 15194376 A JP15194376 A JP 15194376A JP 15194376 A JP15194376 A JP 15194376A JP S5376771 A JPS5376771 A JP S5376771A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- type field
- insulated gate
- gate type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To reduce the floating capacity between gate and substrate, increase dielectric strength and increase mobility by forming an oxide film on a semi-insulation type semiconductor of less than 1 x 1018/cm3 in impruity concentration, and making transmission regions of electrodes or holes produced at their interface as an operating region.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15194376A JPS5376771A (en) | 1976-12-20 | 1976-12-20 | Insulated gate type field effect transistor |
US05/825,720 US4157610A (en) | 1976-12-20 | 1977-08-18 | Method of manufacturing a field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15194376A JPS5376771A (en) | 1976-12-20 | 1976-12-20 | Insulated gate type field effect transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5376771A true JPS5376771A (en) | 1978-07-07 |
Family
ID=15529591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15194376A Pending JPS5376771A (en) | 1976-12-20 | 1976-12-20 | Insulated gate type field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5376771A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5586167A (en) * | 1978-12-23 | 1980-06-28 | Nippon Telegr & Teleph Corp <Ntt> | Mos diode |
JPS5676569A (en) * | 1979-11-27 | 1981-06-24 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacture thereof |
JPS5676571A (en) * | 1979-11-28 | 1981-06-24 | Sumitomo Electric Ind Ltd | Mos field effect transistor and manufacture thereof |
US4889827A (en) * | 1987-09-23 | 1989-12-26 | Siemens Aktiengesellschaft | Method for the manufacture of a MESFET comprising self aligned gate |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3493824A (en) * | 1967-08-31 | 1970-02-03 | Gen Telephone & Elect | Insulated-gate field effect transistors utilizing a high resistivity substrate |
-
1976
- 1976-12-20 JP JP15194376A patent/JPS5376771A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3493824A (en) * | 1967-08-31 | 1970-02-03 | Gen Telephone & Elect | Insulated-gate field effect transistors utilizing a high resistivity substrate |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5586167A (en) * | 1978-12-23 | 1980-06-28 | Nippon Telegr & Teleph Corp <Ntt> | Mos diode |
JPS5676569A (en) * | 1979-11-27 | 1981-06-24 | Sumitomo Electric Ind Ltd | Semiconductor device and manufacture thereof |
JPS5676571A (en) * | 1979-11-28 | 1981-06-24 | Sumitomo Electric Ind Ltd | Mos field effect transistor and manufacture thereof |
US4889827A (en) * | 1987-09-23 | 1989-12-26 | Siemens Aktiengesellschaft | Method for the manufacture of a MESFET comprising self aligned gate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52156576A (en) | Production of mis semiconductor device | |
JPS5376771A (en) | Insulated gate type field effect transistor | |
JPS5382179A (en) | Field effect transistor | |
JPS52115663A (en) | Semiconductor device | |
JPS5376676A (en) | High breakdown voltage field effect power transistor | |
JPS5331979A (en) | Insulated gate type field effect semiconductor device | |
JPS5368987A (en) | Semiconductor device | |
JPS5346288A (en) | Mis type semiconductor device | |
JPS5425678A (en) | Field effect transistor of ultra high frequency and high output | |
JPS53110479A (en) | Production of semiconductor device | |
JPS5339088A (en) | Insulated gate type field effect semiconductor device | |
JPS5347278A (en) | Insulated gate type field effect transistor | |
JPS52136583A (en) | Mos type semiconductor device | |
JPS54987A (en) | Manufacture for semiconductor device | |
JPS5372577A (en) | High dielectric strength field effect transistor | |
JPS5364480A (en) | Field effect semiconductor device | |
JPS5413273A (en) | Semiconductor device | |
JPS52135273A (en) | Mos type semiconductor device | |
JPS52147983A (en) | Insulation gate type semiconductor device | |
JPS52141581A (en) | Mos type semiconductor device 7 its manufacture | |
JPS52144980A (en) | Sos semiconductor device | |
JPS52100878A (en) | Field effect transistor | |
JPS5429587A (en) | Semiconductor device | |
JPS5367373A (en) | Semiconductor device | |
JPS5359377A (en) | Insulating gate type electric field effect semiconductor unit and itsproduction |