JPS5376771A - Insulated gate type field effect transistor - Google Patents

Insulated gate type field effect transistor

Info

Publication number
JPS5376771A
JPS5376771A JP15194376A JP15194376A JPS5376771A JP S5376771 A JPS5376771 A JP S5376771A JP 15194376 A JP15194376 A JP 15194376A JP 15194376 A JP15194376 A JP 15194376A JP S5376771 A JPS5376771 A JP S5376771A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
type field
insulated gate
gate type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15194376A
Other languages
Japanese (ja)
Inventor
Toshiaki Ikoma
Hirokuni Tokuda
Kiyoo Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15194376A priority Critical patent/JPS5376771A/en
Priority to US05/825,720 priority patent/US4157610A/en
Publication of JPS5376771A publication Critical patent/JPS5376771A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the floating capacity between gate and substrate, increase dielectric strength and increase mobility by forming an oxide film on a semi-insulation type semiconductor of less than 1 x 1018/cm3 in impruity concentration, and making transmission regions of electrodes or holes produced at their interface as an operating region.
COPYRIGHT: (C)1978,JPO&Japio
JP15194376A 1976-12-20 1976-12-20 Insulated gate type field effect transistor Pending JPS5376771A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15194376A JPS5376771A (en) 1976-12-20 1976-12-20 Insulated gate type field effect transistor
US05/825,720 US4157610A (en) 1976-12-20 1977-08-18 Method of manufacturing a field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15194376A JPS5376771A (en) 1976-12-20 1976-12-20 Insulated gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5376771A true JPS5376771A (en) 1978-07-07

Family

ID=15529591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15194376A Pending JPS5376771A (en) 1976-12-20 1976-12-20 Insulated gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5376771A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5586167A (en) * 1978-12-23 1980-06-28 Nippon Telegr & Teleph Corp <Ntt> Mos diode
JPS5676569A (en) * 1979-11-27 1981-06-24 Sumitomo Electric Ind Ltd Semiconductor device and manufacture thereof
JPS5676571A (en) * 1979-11-28 1981-06-24 Sumitomo Electric Ind Ltd Mos field effect transistor and manufacture thereof
US4889827A (en) * 1987-09-23 1989-12-26 Siemens Aktiengesellschaft Method for the manufacture of a MESFET comprising self aligned gate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3493824A (en) * 1967-08-31 1970-02-03 Gen Telephone & Elect Insulated-gate field effect transistors utilizing a high resistivity substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3493824A (en) * 1967-08-31 1970-02-03 Gen Telephone & Elect Insulated-gate field effect transistors utilizing a high resistivity substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5586167A (en) * 1978-12-23 1980-06-28 Nippon Telegr & Teleph Corp <Ntt> Mos diode
JPS5676569A (en) * 1979-11-27 1981-06-24 Sumitomo Electric Ind Ltd Semiconductor device and manufacture thereof
JPS5676571A (en) * 1979-11-28 1981-06-24 Sumitomo Electric Ind Ltd Mos field effect transistor and manufacture thereof
US4889827A (en) * 1987-09-23 1989-12-26 Siemens Aktiengesellschaft Method for the manufacture of a MESFET comprising self aligned gate

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