JPS54987A - Manufacture for semiconductor device - Google Patents
Manufacture for semiconductor deviceInfo
- Publication number
- JPS54987A JPS54987A JP6576177A JP6576177A JPS54987A JP S54987 A JPS54987 A JP S54987A JP 6576177 A JP6576177 A JP 6576177A JP 6576177 A JP6576177 A JP 6576177A JP S54987 A JPS54987 A JP S54987A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- electrode
- depositing
- integration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To increase the degree of integration and the dielectric strength and also, to reduce the dispersion in the threshold voltage, by selectively etching the side part of the electrode through depositing the material less in the etching speed than that of the electrode material on the gate electrode, when forming the offset section at the drain region side.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6576177A JPS54987A (en) | 1977-06-06 | 1977-06-06 | Manufacture for semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6576177A JPS54987A (en) | 1977-06-06 | 1977-06-06 | Manufacture for semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54987A true JPS54987A (en) | 1979-01-06 |
Family
ID=13296325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6576177A Pending JPS54987A (en) | 1977-06-06 | 1977-06-06 | Manufacture for semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54987A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56110266A (en) * | 1980-02-04 | 1981-09-01 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS57155776A (en) * | 1981-03-23 | 1982-09-25 | Hitachi Ltd | Mos semiconductor device and manufacture thereof |
US8460734B2 (en) | 2004-03-25 | 2013-06-11 | San-Ei Gen F.F.I., Inc. | Method of modifying gum arabic, modified gum arabic obtained by the method, and use thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5022583A (en) * | 1973-06-27 | 1975-03-11 | ||
JPS5114275A (en) * | 1974-07-25 | 1976-02-04 | Fujitsu Ltd | Handotaisochino seizohoho |
-
1977
- 1977-06-06 JP JP6576177A patent/JPS54987A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5022583A (en) * | 1973-06-27 | 1975-03-11 | ||
JPS5114275A (en) * | 1974-07-25 | 1976-02-04 | Fujitsu Ltd | Handotaisochino seizohoho |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56110266A (en) * | 1980-02-04 | 1981-09-01 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS57155776A (en) * | 1981-03-23 | 1982-09-25 | Hitachi Ltd | Mos semiconductor device and manufacture thereof |
JPH0381300B2 (en) * | 1981-03-23 | 1991-12-27 | Hitachi Ltd | |
US8460734B2 (en) | 2004-03-25 | 2013-06-11 | San-Ei Gen F.F.I., Inc. | Method of modifying gum arabic, modified gum arabic obtained by the method, and use thereof |
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