JPS53125778A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS53125778A JPS53125778A JP4052977A JP4052977A JPS53125778A JP S53125778 A JPS53125778 A JP S53125778A JP 4052977 A JP4052977 A JP 4052977A JP 4052977 A JP4052977 A JP 4052977A JP S53125778 A JPS53125778 A JP S53125778A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- source
- drain layer
- drain
- boundary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To remarkably increase the drain dielectric strength, by deeply digging down the Si surface under a gate insulator than a source and drain layer and by separating the source and drain layer by taking the part as the boundary.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4052977A JPS53125778A (en) | 1977-04-08 | 1977-04-08 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4052977A JPS53125778A (en) | 1977-04-08 | 1977-04-08 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53125778A true JPS53125778A (en) | 1978-11-02 |
Family
ID=12582991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4052977A Pending JPS53125778A (en) | 1977-04-08 | 1977-04-08 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53125778A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0016968A1 (en) * | 1979-04-09 | 1980-10-15 | International Business Machines Corporation | Method for fabricating self-aligned high resolution non planar devices employing low resolution registration |
US4763177A (en) * | 1985-02-19 | 1988-08-09 | Texas Instruments Incorporated | Read only memory with improved channel length isolation and method of forming |
US4835584A (en) * | 1986-11-27 | 1989-05-30 | American Telephone And Telegraph Company, At&T Bell Laboratories | Trench transistor |
US4874715A (en) * | 1987-05-20 | 1989-10-17 | Texas Instruments Incorporated | Read only memory with improved channel length control and method of forming |
-
1977
- 1977-04-08 JP JP4052977A patent/JPS53125778A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0016968A1 (en) * | 1979-04-09 | 1980-10-15 | International Business Machines Corporation | Method for fabricating self-aligned high resolution non planar devices employing low resolution registration |
US4763177A (en) * | 1985-02-19 | 1988-08-09 | Texas Instruments Incorporated | Read only memory with improved channel length isolation and method of forming |
US4835584A (en) * | 1986-11-27 | 1989-05-30 | American Telephone And Telegraph Company, At&T Bell Laboratories | Trench transistor |
US4874715A (en) * | 1987-05-20 | 1989-10-17 | Texas Instruments Incorporated | Read only memory with improved channel length control and method of forming |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5435689A (en) | Semiconductor integrated circuit device | |
JPS542679A (en) | Nonvoltile semiconductor memory device | |
JPS5395571A (en) | Semiconductor device | |
JPS53125778A (en) | Semiconductor device | |
JPS53124087A (en) | Manufacture of semiconductor device | |
JPS5418684A (en) | Manufacture of semiconductor device | |
JPS5435686A (en) | Field effect semiconductor device of junction type | |
JPS5346288A (en) | Mis type semiconductor device | |
JPS538072A (en) | Semiconductor device | |
JPS5285474A (en) | Semiconductor device | |
JPS51121272A (en) | Manufacturing method for semiconductor devices | |
JPS5220769A (en) | Longitudinal semi-conductor unit | |
JPS5223274A (en) | Self-matching type semiconductor device | |
JPS5423478A (en) | Semiconductor device of field effect type | |
JPS5440575A (en) | Semiconductor device | |
JPS5421180A (en) | Semiconductor device | |
JPS5367381A (en) | Semiconductor device | |
JPS53139474A (en) | Manufacture of semiconductor device | |
JPS5429092A (en) | Constitution of cable joint | |
JPS5367373A (en) | Semiconductor device | |
JPS547881A (en) | Mos field effect transistor | |
JPS52144980A (en) | Sos semiconductor device | |
JPS5440580A (en) | Wiring contact structure of semiconductor device | |
JPS51131277A (en) | Semi-conductor unit manufacturing process | |
JPS5373979A (en) | Transistor device |