JPS53124087A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS53124087A JPS53124087A JP3921377A JP3921377A JPS53124087A JP S53124087 A JPS53124087 A JP S53124087A JP 3921377 A JP3921377 A JP 3921377A JP 3921377 A JP3921377 A JP 3921377A JP S53124087 A JPS53124087 A JP S53124087A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- impurity
- injecting
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thyristors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE: To secure formation of an isolation region in a short time by forming the poly Si at the groove provided surrounding the prescribed area of the Si substrate and then injecting the impurity.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3921377A JPS53124087A (en) | 1977-04-05 | 1977-04-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3921377A JPS53124087A (en) | 1977-04-05 | 1977-04-05 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53124087A true JPS53124087A (en) | 1978-10-30 |
Family
ID=12546849
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3921377A Pending JPS53124087A (en) | 1977-04-05 | 1977-04-05 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53124087A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56114351A (en) * | 1980-02-15 | 1981-09-08 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
JPS58149A (en) * | 1981-06-25 | 1983-01-05 | Seiko Epson Corp | Semiconductor device |
JPS62117370A (en) * | 1985-11-15 | 1987-05-28 | Semiconductor Res Found | Manufacture of double-gate electrostatic induction thyristor |
JPS62295436A (en) * | 1987-05-08 | 1987-12-22 | Seiko Epson Corp | Manufacture of semiconductor device |
JPS62295435A (en) * | 1987-05-08 | 1987-12-22 | Seiko Epson Corp | Semiconductor device |
JP2004336008A (en) * | 2003-04-16 | 2004-11-25 | Fuji Electric Holdings Co Ltd | Reverse blocking insulated gate type bipolar transistor and its fabrication method |
JP2006049600A (en) * | 2004-08-05 | 2006-02-16 | Fuji Electric Holdings Co Ltd | Semiconductor device manufacturing method |
JP2006190730A (en) * | 2005-01-04 | 2006-07-20 | Fuji Electric Holdings Co Ltd | Manufacturing method of reverse blocking insulating gate bipolar transistor |
-
1977
- 1977-04-05 JP JP3921377A patent/JPS53124087A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56114351A (en) * | 1980-02-15 | 1981-09-08 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Manufacture of semiconductor device |
JPS58149A (en) * | 1981-06-25 | 1983-01-05 | Seiko Epson Corp | Semiconductor device |
JPS62117370A (en) * | 1985-11-15 | 1987-05-28 | Semiconductor Res Found | Manufacture of double-gate electrostatic induction thyristor |
JPH0257348B2 (en) * | 1985-11-15 | 1990-12-04 | Handotai Kenkyu Shinkokai | |
JPS62295436A (en) * | 1987-05-08 | 1987-12-22 | Seiko Epson Corp | Manufacture of semiconductor device |
JPS62295435A (en) * | 1987-05-08 | 1987-12-22 | Seiko Epson Corp | Semiconductor device |
JP2004336008A (en) * | 2003-04-16 | 2004-11-25 | Fuji Electric Holdings Co Ltd | Reverse blocking insulated gate type bipolar transistor and its fabrication method |
JP2006049600A (en) * | 2004-08-05 | 2006-02-16 | Fuji Electric Holdings Co Ltd | Semiconductor device manufacturing method |
JP2006190730A (en) * | 2005-01-04 | 2006-07-20 | Fuji Electric Holdings Co Ltd | Manufacturing method of reverse blocking insulating gate bipolar transistor |
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