JPS53124087A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS53124087A
JPS53124087A JP3921377A JP3921377A JPS53124087A JP S53124087 A JPS53124087 A JP S53124087A JP 3921377 A JP3921377 A JP 3921377A JP 3921377 A JP3921377 A JP 3921377A JP S53124087 A JPS53124087 A JP S53124087A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
impurity
injecting
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3921377A
Other languages
Japanese (ja)
Inventor
Seiichi Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3921377A priority Critical patent/JPS53124087A/en
Publication of JPS53124087A publication Critical patent/JPS53124087A/en
Pending legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE: To secure formation of an isolation region in a short time by forming the poly Si at the groove provided surrounding the prescribed area of the Si substrate and then injecting the impurity.
COPYRIGHT: (C)1978,JPO&Japio
JP3921377A 1977-04-05 1977-04-05 Manufacture of semiconductor device Pending JPS53124087A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3921377A JPS53124087A (en) 1977-04-05 1977-04-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3921377A JPS53124087A (en) 1977-04-05 1977-04-05 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS53124087A true JPS53124087A (en) 1978-10-30

Family

ID=12546849

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3921377A Pending JPS53124087A (en) 1977-04-05 1977-04-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS53124087A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114351A (en) * 1980-02-15 1981-09-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS58149A (en) * 1981-06-25 1983-01-05 Seiko Epson Corp Semiconductor device
JPS62117370A (en) * 1985-11-15 1987-05-28 Semiconductor Res Found Manufacture of double-gate electrostatic induction thyristor
JPS62295436A (en) * 1987-05-08 1987-12-22 Seiko Epson Corp Manufacture of semiconductor device
JPS62295435A (en) * 1987-05-08 1987-12-22 Seiko Epson Corp Semiconductor device
JP2004336008A (en) * 2003-04-16 2004-11-25 Fuji Electric Holdings Co Ltd Reverse blocking insulated gate type bipolar transistor and its fabrication method
JP2006049600A (en) * 2004-08-05 2006-02-16 Fuji Electric Holdings Co Ltd Semiconductor device manufacturing method
JP2006190730A (en) * 2005-01-04 2006-07-20 Fuji Electric Holdings Co Ltd Manufacturing method of reverse blocking insulating gate bipolar transistor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56114351A (en) * 1980-02-15 1981-09-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
JPS58149A (en) * 1981-06-25 1983-01-05 Seiko Epson Corp Semiconductor device
JPS62117370A (en) * 1985-11-15 1987-05-28 Semiconductor Res Found Manufacture of double-gate electrostatic induction thyristor
JPH0257348B2 (en) * 1985-11-15 1990-12-04 Handotai Kenkyu Shinkokai
JPS62295436A (en) * 1987-05-08 1987-12-22 Seiko Epson Corp Manufacture of semiconductor device
JPS62295435A (en) * 1987-05-08 1987-12-22 Seiko Epson Corp Semiconductor device
JP2004336008A (en) * 2003-04-16 2004-11-25 Fuji Electric Holdings Co Ltd Reverse blocking insulated gate type bipolar transistor and its fabrication method
JP2006049600A (en) * 2004-08-05 2006-02-16 Fuji Electric Holdings Co Ltd Semiconductor device manufacturing method
JP2006190730A (en) * 2005-01-04 2006-07-20 Fuji Electric Holdings Co Ltd Manufacturing method of reverse blocking insulating gate bipolar transistor

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