JPS53137678A - Manufacture for mos type semiconductor device - Google Patents

Manufacture for mos type semiconductor device

Info

Publication number
JPS53137678A
JPS53137678A JP5226977A JP5226977A JPS53137678A JP S53137678 A JPS53137678 A JP S53137678A JP 5226977 A JP5226977 A JP 5226977A JP 5226977 A JP5226977 A JP 5226977A JP S53137678 A JPS53137678 A JP S53137678A
Authority
JP
Japan
Prior art keywords
semiconductor device
manufacture
type semiconductor
mos type
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5226977A
Other languages
Japanese (ja)
Inventor
Michihiro Inoue
Takeshi Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5226977A priority Critical patent/JPS53137678A/en
Publication of JPS53137678A publication Critical patent/JPS53137678A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To simply make high integration for the device, by forming the polycrystal silicon layer thick in advance, forming the channel region with ion injection method, and simultaneously removing the impurity part prior to the diffusion by thermal processing through the addition of impurity, in a double diffusion type MOS semiconductor device.
COPYRIGHT: (C)1978,JPO&Japio
JP5226977A 1977-05-07 1977-05-07 Manufacture for mos type semiconductor device Pending JPS53137678A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5226977A JPS53137678A (en) 1977-05-07 1977-05-07 Manufacture for mos type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5226977A JPS53137678A (en) 1977-05-07 1977-05-07 Manufacture for mos type semiconductor device

Publications (1)

Publication Number Publication Date
JPS53137678A true JPS53137678A (en) 1978-12-01

Family

ID=12910045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5226977A Pending JPS53137678A (en) 1977-05-07 1977-05-07 Manufacture for mos type semiconductor device

Country Status (1)

Country Link
JP (1) JPS53137678A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62274767A (en) * 1986-05-23 1987-11-28 Fujitsu Ltd Semiconductor device having high breakdown strength and manufacture thereof
US5640033A (en) * 1992-07-09 1997-06-17 Kabushiki Kaisha Toshiba MOSFET having fine gate electrode structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62274767A (en) * 1986-05-23 1987-11-28 Fujitsu Ltd Semiconductor device having high breakdown strength and manufacture thereof
JPH0525393B2 (en) * 1986-05-23 1993-04-12 Fujitsu Ltd
US5640033A (en) * 1992-07-09 1997-06-17 Kabushiki Kaisha Toshiba MOSFET having fine gate electrode structure

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