JPS52104881A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS52104881A
JPS52104881A JP2113376A JP2113376A JPS52104881A JP S52104881 A JPS52104881 A JP S52104881A JP 2113376 A JP2113376 A JP 2113376A JP 2113376 A JP2113376 A JP 2113376A JP S52104881 A JPS52104881 A JP S52104881A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
beneath
construction
high concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2113376A
Other languages
Japanese (ja)
Inventor
Yoshio Sakai
Ryoichi Hori
Toshiaki Masuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2113376A priority Critical patent/JPS52104881A/en
Publication of JPS52104881A publication Critical patent/JPS52104881A/en
Pending legal-status Critical Current

Links

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Weting (AREA)

Abstract

PURPOSE: To realize a construction in which a high concentration impurity layer of a channel stopper is formed only beneath the thick oxide films in self matching way with out increasing mask matching steps.
COPYRIGHT: (C)1977,JPO&Japio
JP2113376A 1976-03-01 1976-03-01 Manufacture for semiconductor device Pending JPS52104881A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2113376A JPS52104881A (en) 1976-03-01 1976-03-01 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2113376A JPS52104881A (en) 1976-03-01 1976-03-01 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS52104881A true JPS52104881A (en) 1977-09-02

Family

ID=12046385

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2113376A Pending JPS52104881A (en) 1976-03-01 1976-03-01 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS52104881A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124755A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor device
JPS6116547A (en) * 1984-05-09 1986-01-24 テキサス　インスツルメンツ　インコ−ポレイテツド Method of producing mos transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59124755A (en) * 1982-12-29 1984-07-18 Fujitsu Ltd Semiconductor device
JPH0454982B2 (en) * 1982-12-29 1992-09-01 Fujitsu Ltd
JPS6116547A (en) * 1984-05-09 1986-01-24 テキサス　インスツルメンツ　インコ−ポレイテツド Method of producing mos transistor

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