JPS5429587A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5429587A JPS5429587A JP9503677A JP9503677A JPS5429587A JP S5429587 A JPS5429587 A JP S5429587A JP 9503677 A JP9503677 A JP 9503677A JP 9503677 A JP9503677 A JP 9503677A JP S5429587 A JPS5429587 A JP S5429587A
- Authority
- JP
- Japan
- Prior art keywords
- forming
- semiconductor device
- dielectric strength
- inversion layer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prevent the lowering in the dielectric strength due to inversion layer, by forming the N type inversion layer at the boundary made in forming the isolation oxide film so that it is not in contact with the P type region in a semiconductor substrate and by determining the dielectric strength with the thickness of the epitaxial layer.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9503677A JPS5429587A (en) | 1977-08-10 | 1977-08-10 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9503677A JPS5429587A (en) | 1977-08-10 | 1977-08-10 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5429587A true JPS5429587A (en) | 1979-03-05 |
Family
ID=14126846
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9503677A Pending JPS5429587A (en) | 1977-08-10 | 1977-08-10 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5429587A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59106162A (en) * | 1982-12-10 | 1984-06-19 | Matsushita Electronics Corp | Semiconductor device |
JPS59106161A (en) * | 1982-12-10 | 1984-06-19 | Matsushita Electronics Corp | Semiconductor device |
-
1977
- 1977-08-10 JP JP9503677A patent/JPS5429587A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59106162A (en) * | 1982-12-10 | 1984-06-19 | Matsushita Electronics Corp | Semiconductor device |
JPS59106161A (en) * | 1982-12-10 | 1984-06-19 | Matsushita Electronics Corp | Semiconductor device |
JPH0516193B2 (en) * | 1982-12-10 | 1993-03-03 | Matsushita Electronics Corp | |
JPH0580834B2 (en) * | 1982-12-10 | 1993-11-10 | Matsushita Electronics Corp |
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